E-TA2012 T 5DB N1 RF/IF and RFID

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Attenuators are electronic devices that reduce the level of an electrical signal without distorting its waveform. The E-TA2012 T 5DB N1 is a precision fixed attenuator designed for applications operating in the DC-3GHz frequency range. This attenuator employs a ceramic foundry technology that provides stable attenuation over a wide range of operating temperatures. The base material is high temperature alumina ceramic, which has excellent electrical characteristics and thermal stability.

The E-TA2012 T 5DB N1 features several characteristic attributes. First, it offers high attenuation accuracy. The error in controlling the amplitude of the signal is ± 0.3 dB for each port. The E-TA2012 T 5DB N1 also has an impressive power handling capability. It can dissipate up to 500mW of power without compromising the attenuation accuracy. Furthermore, the device has excellent contact resistance stability. The contact resistance of each port is less than 30W.

The E-TA2012 T 5DB N1 is designed for a wide variety of applications. It is typically used in radio frequency systems and medical imaging devices. The attenuator can be used to control the level of the input signal in order to ensure that it is correctly processed by the device. Additionally, the attenuator can be used to reduce the effect of noise in the system.

The E-TA2012 T 5DB N1 is based on an intrinsic attenuator design. This means that it uses an intrinsic semiconductor substrate to attenuate the signal or suppress the noise. In other words, the intrinsic semiconductor acts as a barrier that reduces the amplitude of the signal passing through it. This reduces both the level of the signal and the amount of noise in the system. The intrinsic semiconductor material is Lambertian, meaning that it has a Lambertian radiation pattern, which is symmetrical around the attenuator.

In conclusion, the E-TA2012 T 5DB N1 is a precision fixed attenuator designed for applications operating in the DC-3GHz frequency range. It offers high attenuation accuracy and a high power handling capability. Additionally, the attenuator can reduce the amount of noise in the system. The device is based on an intrinsic attenuator design, which uses an intrinsic semiconductor substrate to attenuate the signal or suppress the noise. The E-TA2012 T 5DB N1 is suitable for a wide variety of applications, such as radio frequency systems and medical imaging devices.

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