ECQ-B1H223JF3

Operating Temperature:	-40°C ~ 105°C
Features:	--
Ratings:	--
Applications:	General Purpose
Lead Spacing:	0.197" (5.00mm)
Termination:	PC Pins
Height - Seated (Max):	0.276" (7.00mm)
Size / Dimension:	0.295" L x 0.118" W (7.50mm x 3.00mm)
Package / Case:	Radial
Mounting Type:	Through Hole
Series:	ECQ-B(F)
Dielectric Material:	Polyester
Voltage Rating - DC:	50V
Voltage Rating - AC:	--
Tolerance:	±5%
Capacitance:	0.022µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Box (TB)

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ECQ-B1H223JF3 film capacitors are passive electrical components composed of two or more layers of thin plastic film which are laminated together. They are most often used in pulse-discharge applications due to their low series inductance and low equivalent series resistance (ESR). They typically provide a design shelf life of 5,000 hours at 85°C.ECQ-B1H223JF3 film capacitors have a wide range of applications, ranging from basic electronic component applications to more specialized power electronics requirements, such as those found in electric vehicle (EV) drivetrain or propulsion systems, wind turbine inverters, and aerospace propulsion systems. They are also suitable for use in medium- and high-frequency switching circuits, motor drives, and ac-dc power supplies.ECQ-B1H223JF3 film capacitors are characterized by low Equivalent Series Resistance (ESR), low Dissipation Factor (DF), and low leakage current. This is achieved by embedding an oxide layer between two layers of plastic film that provides efficient electrical conduction, allowing for a wide range of operating temperatures.Film capacitors offer a high degree of reliability and stability, allowing for long-term performance and low ESR, making them ideal for high-current applications. Additionally, the low-ESR design allows for a relatively small size, making them an ideal choice for space-constrained applications.The most important aspect of ECQ-B1H223JF3 film capacitors is their working principle. In essence, the construction of these capacitors consists of two electrodes separated by a thin oxide film. The electrodes are usually made of a metal such as aluminium, nickel-coated brass, or stainless steel. The oxide film is usually of metal oxide material such as tantalum oxide, zirconium oxide, or titanium dioxide. When an electrical voltage is applied across the film, a dielectric field is created, causing electrons to be redistributed over the oxide layer. The dielectric field prevents electric current flow and creates an electrical storage element with the effect of storing a charge, which is what capacitors do.ECQ-B1H223JF3 film capacitors are designed for use in high current applications. They are characterized by low equivalent series resistance (ESR), low dissipation factor (DF), high insulation resistance, and low leakage current. Additionally, these capacitors can be used in high frequency and medium frequency applications.The working principle of ECQ-B1H223JF3 film capacitors is based on the interaction between the metal electrodes and the metal oxide film in the presence of an electrical field. An electric field is created when an electrical voltage is applied across the film, which causes electrons to be redistributed to form an electric storage element with the effect of storing a charge. The charge is stored by the major electrical components – electrodes and dielectric film – and can be used to store energy. This makes film capacitors an ideal choice for energy storage applications.In conclusion, ECQ-B1H223JF3 film capacitors are reliable, stable components which utilise an efficient electrical conduction oxide layer to provide low series inductance and low equivalent series resistance (ESR). These capacitors are typically used in pulse-discharge applications and power electronics requirements, such as those found in electric vehicle (EV) drivetrain or propulsion systems, wind turbine inverters, and aerospace propulsion systems. Additionally, their low-ESR design, combined with their low dissipation factor (DF), high insulation resistance, and low leakage current make them well-suited for energy storage applications.

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