
Allicdata Part #: | X425-ND |
Manufacturer Part#: |
ECS-110.5-S-4 |
Price: | $ 0.48 |
Product Category: | Crystals, Oscillators, Resonators |
Manufacturer: | ECS Inc. |
Short Description: | CRYSTAL 11.0592MHZ SERIES T/H |
More Detail: | 11.0592MHz ±30ppm Crystal Series 60 Ohms HC-49/US |
DataSheet: | ![]() |
Quantity: | 877 |
1 +: | $ 0.43470 |
10 +: | $ 0.36225 |
50 +: | $ 0.32609 |
100 +: | $ 0.28980 |
500 +: | $ 0.27531 |
1000 +: | $ 0.23184 |
2500 +: | $ 0.21735 |
5000 +: | $ 0.21011 |
10000 +: | $ 0.20286 |
Series: | HC-49US |
Packaging: | Bulk |
Part Status: | Active |
Type: | MHz Crystal |
Frequency: | 11.0592MHz |
Frequency Stability: | ±50ppm |
Frequency Tolerance: | ±30ppm |
Load Capacitance: | Series |
ESR (Equivalent Series Resistance): | 60 Ohms |
Operating Mode: | Fundamental |
Operating Temperature: | -10°C ~ 70°C |
Ratings: | -- |
Mounting Type: | Through Hole |
Package / Case: | HC-49/US |
Size / Dimension: | 0.447" L x 0.183" W (11.35mm x 4.65mm) |
Height - Seated (Max): | 0.138" (3.50mm) |
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Crystals are a special class of material structures which have unique electrical, optical and thermal properties. Through special processing, such as electroforming, these properties can be tailored for specific applications. ECS-110.5-S-4 crystal structure is used in a wide variety of electronic and electrical applications.
In general, the ECS-110.5-S-4 crystal structure is composed of five layers, including a top and bottom layer of SiO2, and a middle layer of SiN4. The middle layer is etched with a pattern of electrodes which are connected to the top and bottom layers of SiO2. This creates a layer of alternating current which is called a “charge transfer layer”. This layer is used to form crystals with high electrical conductivity, meaning they can be used to create powerful and efficient transistors, rectifiers and other components.
ECS-110.5-S-4 crystal is widely used in microwave devices, as well as in other applications requiring high quality, low power consumption and high efficiency. It can also be used in a wide variety of computer and communication systems, automotive systems and aerospace systems. The ECS-110.5-S-4 crystal is an ideal choice for high frequency applications.
For the ECS-110.5-S-4 crystal, the working principle is based on the fact that when a charge is applied to the top and bottom electrode of the structure, electrons move through the layer of SiN4 and create a strong electric field. The electric field induces a current through the layer of SiN4 which is then used to create a signal. This signal is received and processed by other downstream components. The signal, which includes information on the frequency of the signal, is further used by other components to control a variety of functions.
The ECS-110.5-S-4 crystal is a highly versatile device, as it can be used in different applications ranging from microwave equipment to optical and semiconductor manufacturing. These devices are extremely small and lightweight, making them ideal for devices with limited space. Additionally, the ECS-110.5-S-4 crystal is highly reliable and efficient, thus providing long-term stability for applications.
In conclusion, ECS-110.5-S-4 crystal is a type of crystal which has wide applications in different electronic and electrical fields. Its high frequency performance and superior electrical and thermal properties make it an ideal choice for many different applications. The working principle of these crystals is based on the fact that when a charge is applied to their electrodes, they develop an electric field which induces a current, which is then used to control various functions.
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