EL357NE(TA)-VG

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Optoisolators -- Transistor, Photovoltaic Output -- have long been used to transfer signals from one element to another in an electrical system. The EL357NE(TA)-VG, developed by Everlight Electronics Co., Ltd., is a type of photo-voltaic-output optoisolator.

The EL357NE(TA)-VG consists of an infrared emitter diode, coupled to a photo-voltaic detector. The emitter diode is connected to an oscillator circuit, located in the base of the device. When the device is triggered, the emitter diode transmits infrared radiation which is modulated with the oscillator signal. The photo-voltaic detector receives the infrared radiation and converts it into an electrical signal, which is then amplified and outputted.

The EL357NE(TA)-VG has a number of ideal applications. As a direct replacement for discrete photo-transistors, it provides higher noise immunity and faster response times. Additionally, it can be used in transition detection, for controlling data communications systems, and for switching low-level signals. Furthermore, its low current consumption, making it more energy efficient than many other optoisolators, makes it an excellent choice for battery-powered systems.

In broad terms, the working principle of the EL357NE(TA)-VG is similar to that of other optoisolators. The emitter transmits an infrared signal which is then received and converted into an electrical signal by the detector. This signal is then amplified and outputted.

The EL357NE(TA)-VG is a versatile optoisolator that can be used in a wide range of applications. Its superior noise immunity, fast response time, and low current consumption make it an attractive choice for many applications, including transition detection, control of data communications systems, and switching low-level signals. Furthermore, its availability in industry standard 8-pin SOP and DIP packages ensures minimum integration time.

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