Allicdata Part #: | P123595-ND |
Manufacturer Part#: |
ERZ-U11JP541 |
Price: | $ 228.81 |
Product Category: | Circuit Protection |
Manufacturer: | Panasonic Electronic Components |
Short Description: | SINGLETRANSIENT/SURGE ABSORBERS1 |
More Detail: | Varistor 1 Circuit Chassis Mount Module |
DataSheet: | ERZ-U11JP541 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 208.00700 |
10 +: | $ 197.96200 |
25 +: | $ 190.79000 |
Series: | ZNR® |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Maximum AC Volts: | 264V |
Maximum DC Volts: | 373V |
Energy: | -- |
Number of Circuits: | 1 |
Operating Temperature: | -40°C ~ 70°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
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.ERZ-U11JP541 manufactured by Littelfuse is a series of transfacial mounted Silicon avalanche transient suppression diode with high surge current capability and fast response time. It is ideal for applications requiring high efficiency surge protection such as propulsion systems, power management, and frequency converters.
The ERZ-U11JP541 belongs to TVS - Varistors, MOVs and is a special type of semiconductor device. It is a bidirectional, uni-directional or bi-directional breakdown voltage (BVBR) device connected in parallel with other components which is used to protect sensitive electronics from transient overvoltage events. It functions by preventing or limiting current flow through its gate terminals, regulating the voltage across its terminals, and providing a near-constant voltage level. The avalanche breakdown in the device is responsible for providing a fast response time in the event of an overvoltage. The BVBR of the device is adjustable through external resistors.
The operating principle of ERZ-U11JP541 is based on the avalanche breakdown mechanism. Avalanche breakdown occurs when a reverse-biased diode is driven with a voltage of sufficient amplitude to produce electron-hole pair generation. These pairs then cause a multiplication of electrons and holes, producing an avalanche breakdown of the structure. When a transient or overvoltage occurs, the diode is enabled for operation. The avalanche breakdown then takes place, enabling the flow of current through the device and providing a very fast response time.
The ERZ-U11JP541 series offer high surge current capability, fast response time, and adjustable BVBR, and is classified according to IEC60747-5-5. The device is particularly suitable for power management and for protecting electronic circuits from transients. The device is also well-suited for protecting propulsion systems, frequency converters, and automotive applications. The series is also able to operate at temperatures ranging from -40 to +85°C, allowing it to be used in a wide range of applications.
In conclusion, ERZ-U11JP541 belongs to TVS- Varistors, MOVs series and it is a special type of semiconductor which is designed to provide fast response time and provide protection from transient overvoltage events. This device can be used in various applications ranging from propulsion systems, power management, and frequency converters.
The specific data is subject to PDF, and the above content is for reference
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