FD-DF80R12W1H3_B52

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	40A
Power - Max:	215W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 40A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	235nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FD-DF80R12W1H3_B52 Application Field and Working Principle

Introduction

Insulated Gate Bipolar Transistors (IGBTs) are a type of semiconductor device that has become increasingly popular in many different industrial applications. The FD-DF80R12W1H3_B52 is an example of an IGBT Module made by Mitsubishi Electric Corporation. In this article, we\'ll discuss the FD-DF80R12W1H3_B52\'s application fields and its working principles.

Types of IGBTs

Before we discuss the FD-DF80R120W1H3_B52, it will be helpful to understand the types of IGBTs that exist. IGBTs can be divided into two categories: Discretes and Modules. Discrete IGBTs consist of one IGBT package and one diode package. Modules, on the other hand, are integrated packages that contain several IGBTs and diodes. Modules are usually used in larger applications and require less space than discrete IGBTs.

FD-DF80R12W1H3_B52 Applications

The FD-DF80R12W1H3_B52 is a module type IGBT. It is used in applications such as motor control, welding machines, and UPS systems. It is often used for its high efficiency, fast switching times, and high-cost performance. It has a maximum blocking voltage of 1200V, a max collector current of 30A, and a PWM frequency of 15KHz.

FD-DF80R12W1H3_B52 Working Principle

The working principle of the FD-DF80R12W1H3_B52 is based on the principle of the insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal device composed of two distinct parts, an insulated gate and a bipolar transistor. The two parts are electrically isolated from each other, allowing them to operate independently.When a positive voltage is applied to the gate, the thin layer of insulator that electrically isolates the gate from the bipolar transistor breaks down, allowing current to flow from the collector to the emitter. This is known as “turning on” the transistor.When the voltage is removed from the gate, the breakdown no longer occurs and the flow of current is blocked. This is known as “turning off” the transistor. By applying varying degrees of positive and negative voltages to the gate of the IGBT in a timed sequence, a PWM signal can be generated, allowing the transistor to be used in a variety of applications.

Conclusion

The FD-DF80R12W1H3_B52 is a popular IGBT Module used in many different industrial applications. It is characterized by its high efficiency, fast switching times, and high-cost performance. Its working principle is based on the insulated gate bipolar transistor (IGBT) and it can be used to generate PWM signals for a variety of applications.

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