FP10R06W1E3B11BOMA1 Allicdata Electronics
Allicdata Part #:

FP10R06W1E3B11BOMA1-ND

Manufacturer Part#:

FP10R06W1E3B11BOMA1

Price: $ 19.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 100A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FP10R06W1E3B11BOMA1 datasheetFP10R06W1E3B11BOMA1 Datasheet/PDF
Quantity: 1000
24 +: $ 17.43180
Stock 1000Can Ship Immediately
$ 19.18
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Power - Max: 68W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 550pF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FP10R06W1E3B11BOMA1 Application Field and Working Principle

The FP10R06W1E3B11BOMA1 is an insulated gate bipolar transistor (IGBT) module from Fairchild Semiconductor. It is a type of transistor that combines the features of both a bipolar junction transistor (BJT) and a field-effect transistor (FET) with the performance benefits of both devices. It is designed for use in power circuits in consumer electronics and automotive applications.

The FP10R06W1E3B11BOMA1 is a 6-amp IGBT module. It has a peak collector current of 10 amps and a maximum continuous forward current of 6 amps. It is rated for an operating junction temperature of up to 175 degrees Celsius. The IGBT module has a voltage drop of 750 mV across collector and emitter at 10 amps and a voltage drop of 1.5 V at 6 amps. The module has an electron mobility of 535 square centimeters per volt-second, which helps it achieve high power efficiencies.

The module has a voltage of 600V and features a fast switching speed of 600V/us. It is designed for high-power applications and can switch up to 28 kilowatts of power. The module has a low turn-on voltage of 2.3V, which helps reduce losses in the circuit. The low turn-on voltage also helps reduce the amount of power consumed during switching.

The working principle of a FP10R06W1E3B11BOMA1 IGBT module is relatively simple compared to other transistors. When a positive voltage is applied to the emitter, electrons flow from the emitter to the collector, creating an inversion layer of holes between the emitter and collector. When a negative voltage is applied to the base, the holes in the inversion layer are attracted to the base, creating a current between the collector and the emitter. The current is able to flow from the collector to the emitter either directly or through the base.

The FP10R06W1E3B11BOMA1 is a reliable and efficient IGBT module that is suitable for use in a variety of power applications. It is able to handle high-power switching efficiently and has a low turn-on voltage that helps reduce power consumption. The module is designed for applications in consumer electronics and automotive applications and is an excellent choice for those looking for an efficient, reliable, and high-power switching device.

The specific data is subject to PDF, and the above content is for reference

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