Allicdata Part #: | FP10R06W1E3BOMA1-ND |
Manufacturer Part#: |
FP10R06W1E3BOMA1 |
Price: | $ 19.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP10R06W1E3BOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 17.43180 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 16A |
Power - Max: | 68W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 10A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 550pF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
The FP10R06W1E3BOMA1 is an insulated-gate bipolar transistor (IGBT) module with two circuits. Its advanced design offers low power loss and high noise immunity with an improved gate charging system. This type of module is used in a variety of industrial, consumer electronics and automotive equipment.
Applications
The FP10R06W1E3BOMA1 is a mainstay in many industrial applications, including AC and DC motor control, power tools, welding and medical equipment. It is widely used in consumer electronics such as in audio amplifiers, and it is also widely employed in automotive systems, including those for engine management, lighting and traction.
Working Principle
The FP10R06W1E3BOMA1 is an IGBT module, which is an abbreviation for Insulated-Gate Bipolar Transistor module. An IGBT is a type of transistor that uses a layer of insulation between an N-type and P-type semiconductor to control the flow of electrical current.
The two circuits of the FP10R06W1E3BOMA1 module comprise two gates connected to two separate N-type and P-type substrates. By applying a voltage potential to the gate, the electrons can be displaced from the substrate and switched on, thereby controlling the flow of current. As the voltage is increased, the gain of the circuit increases, and the current will flow through the module.
The module also uses an advanced gate charging system. This system enables a high-speed switching time and reduces the power loss of the module by providing a consistent charging current. This ensures that the gate voltage is maintained for the duration of the current flow.
The module has a wide operating temperature range and can tolerate large current spikes. This enables it to be used in environments where there is sudden and frequent power changes. It also has a low power loss, which makes it well-suited for applications where power efficiency is required.
The FP10R06W1E3BOMA1 is manufactured in a compact package and is available with a variety of terminals depending on the customer\'s requirements. This makes it an ideal solution for a range of different applications.
Conclusion
The FP10R06W1E3BOMA1 module is a highly reliable device that is used in a variety of industrial, consumer electronics and automotive applications. It is an IGBT module with an advanced gate charging system that enables a high switching speed, low power loss and wide operating temperature range. The module is available in a range of packages and with a variety of terminals, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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