FP10R12YT3B4BOMA1

Series:	*
Part Status:	Not For New Designs

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FP10R12YT3B4BOMA1 Application Field and Working PrinciplePower semiconductor devices, such as Inter Gate Bipolar Transistors (IGBTs) and MOSFETs are increasingly found in wide range of electronics products. The vast majority of these applications rely on the design, manufacturing, and quality assurance processes of a high performance semiconductor module. The FP10R12YT3B4BOMA1 is one such module that is offering reliable, cost-effective solutions for challenging power management challenges in industrial, medical, defense, and other demanding industries. The FP10R12YT3B4BOMA1 module design features advanced features such as low forward and reverse recovery times, high-temperature performance, active protection devices, and complete interface solutions. It is based on the latest IGBT and MOSFET technologies, and it is designed to maximize performance, reduce power loss and protect against overload conditions. The FP10R12YT3B4BOMA1 module offers a wide range of application possibilities, most notably in demanding high-power applications such as welding, laser power management, motor control, automotive devices and more. It offers high-temperature resistance, a low forward and reverse recovery time, high thermal stability, and low leakage current at high temperatures. The FP10R12YT3B4BOMA1 module features a three-phase power bridge design, which offers optimized performance with an improved EMI behavior. The module also features anti-tamiya control to minimize switching losses, and it is designed for high power applications requiring rapid turn-off and turn-on. The module is also designed with low temperature degradation and noise emission features. The main features of the FP10R12YT3B4BOMA1 module are fully encapsulated in a hermetically sealed package with built-in protection against ESD, over temperature and over voltage. The core of the module is based on a stack of series and parallel IGBTs and MOSFETs, and it is designed to be operated at a wide range of voltages and temperatures. Furthermore, the module offers integrated protection circuitry and a built-in protection against circuit and overload overloading. The FP10R12YT3B4BOMA1 module works by converting a low power alternating current (AC) supply into a high-power, DC current that can be used to control electric motors, and in other power-related applications. The module uses an insulated gate bipolar transistor (IGBT) to switch the high-power, DC current. The IGBT acts as a bidirectional switch that can turn on and off the flow of electric current with a controlled gate current. The gate current of the IGBT is controlled by a driver circuit, which is supplied with the module, allowing for a reliable switching performance. The module also features a reverse-blocking feature, which helps prevent unsuitable power semiconductor modules from turning on while in the off state. This feature is especially helpful when the device is being used in protection circuits or power supply systems.The FP10R12YT3B4BOMA1 module is a high-performance, reliable and cost-effective solution for a wide array of power management challenges in industrial, medical, defense, automotive, and other demanding industries. It features a robust gate-driving circuit, a three-phase bridge design, low forward and reverse recovery times, low leakage current, high temperature performance, and low noise emission. The module also features a reverse-blocking feature, providing additional protection in power-sensitive applications. The module is ideal for applications requiring high current switching, high efficiency, and reliable operation.

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