GAL22V10D-25LPN Allicdata Electronics
Allicdata Part #:

GAL22V10D-25LPN-ND

Manufacturer Part#:

GAL22V10D-25LPN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Lattice Semiconductor Corporation
Short Description: IC CPLD 10MC 25NS 24DIP
More Detail: N/A
DataSheet: GAL22V10D-25LPN datasheetGAL22V10D-25LPN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: GAL®22V10
Packaging: Tube 
Part Status: Obsolete
Programmable Type: EE PLD
Delay Time tpd(1) Max: 25.0ns
Voltage Supply - Internal: 4.75 V ~ 5.25 V
Number of Logic Elements/Blocks: --
Number of Macrocells: 10
Number of Gates: --
Number of I/O: --
Operating Temperature: 0°C ~ 75°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.300", 7.62mm)
Supplier Device Package: 24-PDIP
Base Part Number: GAL22V10
Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com


1. Describe

GAL22V10D-25LPN has a maximum propagation delay time of 4ns. It combines high-performance CMOS process and electrically erasable (E2) floating gate technology to provide the highest performance of any 22V10 device on the market. CMOS circuit allows Compared with GAL22V10, GAL22V10 has much lower power consumption Bipolar 22V10 device. E2 technology provides high speed (<100ms) Erase time, providing the ability to reprogram or reconfigure The equipment is fast and efficient. The common architecture provides maximum design flexibility by Allows to configure the output logic macro cell (OLMC) in the following ways user. GAL22V10 is fully functional/fuse mapping/parameter compatible with standard bipolar and CMOS 22V10 devices. Unique test circuit and reprogrammable unit allow complete communication, Functional testing in DC and manufacturing processes. Therefore, Lattice Semiconductor provides 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and specified data should be retained for more than 20 years.

2. Features

    1. High-performance E2CMOS® technology

        — 4 ns maximum propagation delay

        — Fmax = 250 MHz

        — The maximum value from clock input to data output is 3.5 ns

        — UltraMOS® advanced CMOS technology

    2. Active pull-ups on all pins

    3. Compatible with standard 22V10 equipment

        — Full function/fusion map/parameter compatibility Bipolar and UVCMOS 22V10 devices

    4. Compared with bipolar, power consumption is reduced by 50% to 75%

        — 90mA typical Icc on low-power devices

        — 45mA typical Icc on a quarter power device

    5. E2 Cell technology

        — Reconfigurable logic

        — Reprogrammable cells

        — 100% test/100% yield

        — High-speed electrical erasing (<100ms)

        — 20 years of data retention

    6. Ten output logic macrocells

        — Maximum flexibility for complex logic design

    7. Preloading of registers and power-on reset

        — 100% functional testability

    8. Applications include:

        — DMA control

        — State machine control

        — High-speed graphics processing

        — Standard logic speed upgrade

    9. Electronic signature for identification

  10. Lead-free packaging options

3. Pin configuration

           image.png


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