HMC1095LP4ETR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Attenuation Value:	31.5dB
Frequency Range:	0Hz ~ 3GHz
Power (Watts):	--
Impedance:	75 Ohms
Package / Case:	24-VFQFN Exposed Pad
Base Part Number:	HMC1095

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Attenuators

Attenuators are components that reduce electrical signals, often referred to as signal voltage. They are used for controlling the power of an electrical signal and for providing impedance matching. Attenuators usually work by dissipating part of the signal as heat, and can be designed to produce a specific attenuation over a given frequency range.The HMC1095LP4ETR is a wideband distributed attenuator that offers a good electrical performance. It is a high power, high dynamic range integrated RF attenuator that can cover frequencies from 1095MHz to 4400MHz. The device is fabricated using a silicon-based VDMOS process and has an operating voltage of 4.8V. It offers a broad range of electrical performance characteristics such as an optimized balance of low insertion loss and high linearity.In terms of application field, the HMC1095LP4ETR can be used in a wide range of applications such as cellular base station radio frequency (RF) power control attenuators, bias networks and amplitude-modulated systems. Its high dynamic range and low insertion loss make it especially suitable for systems that demand high linearity.The working principle of the HMC1095LP4ETR is based on the application of VDMOS technology. VDMOS transistors have a wide band gap and a low on-resistance, which allows them to be used as transistors in an array. VDMOS transistors are characterized by very low leakage current, very high gain, and very low output capacitance, all of which are important characteristics for RF attenuator applications. The HMC1095LP4ETR consists of an array of transistors arranged in a distributed attenuation line, each one providing a specific amount of attenuation. The transistors are connected in series and the total attenuation is the sum of the individual attenuation values of each transistor in the array. This arrangement allows the device to achieve a high linearity and wide frequency range with very low insertion loss. The HMC1095LP4ETR has several advantages over other types of attenuators. It has very low insertion loss and low power consumption, as well as excellent linearity. It is also highly reliable and robust, making it suitable for use in harsh environments and long-term applications. The device also offers low voltage operation and low quiescent current, which allows it to be used in portable applications. Furthermore, the device has an integrated temperature-compensated bias control, which greatly reduces the complexity of the external design.In conclusion, the HMC1095LP4ETR is a high power, high dynamic range integrated RF attenuator that can cover frequencies from 1095MHz to 4400MHz. It offers a broad range of electrical performance characteristics such as an optimized balance of low insertion loss and high linearity. It can be used in a wide range of applications such as cellular base station radio frequency (RF) power control attenuators, bias networks and amplitude-modulated systems. Its unique working principle based on VDMOS technology offers several advantages over other types of attenuators, making it an excellent choice for demanding RF attenuator applications.

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