HMC194AMS8E

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RF switches are an important structural element in wireless communication and wireless equipment. Their basic function is to switch and control the RF circuits. HMC194AMS8E is a high-performance reflective single pole 8 throw (SP8T) reflective switch from Analog Devices. This switch runs from DC to 26.5GHz, and is mainly used in microwave and millimeter wave applications.

The HMC194AMS8E is a CMOS device and designed on a 0.15μm process. It uses a unique interdigitated transmission line topology to achieve nearly constant performance over 110 dB of dynamic range and high isolation from DC to 26.5 GHz. Its insertion loss of 0.9dB & return loss of 24dB is excellent and improves overall signal fidelity.

The HMC194AMS8E is constituted by multiple series-shunted transmission lines, each of which is comprised of two series coupled transmission lines, an interdigitated transmission line, and a tunable termination network. This topology leads to excellent reflection isolation up to 110 dB over the entire frequency range of DC to 26.5 GHz. Its excellent power handling capability of 28 dBm ensures robust and reliable operation in high power applications.

Because of its wide frequency range, good isolation, low insertion loss, and good power handling capability, the HMC194AMS8E is suitable for a variety of applications such as dividing signal into separate channels, signal routing, frequency signal distribution, frequency mixing, and frequency hopping. The switch can also be used for transmit/receive switching, gain control, and attenuation control. It is widely used in fiber-optic equipment, radio transceivers, base stations, and satellite communication equipment.

In summary, HMC194AMS8E is a high performance reflective single pole 8 throw (SP8T) reflective switch from Analog Devices. It is optimized for microwave and millimeter wave applications and also suitable for various other RF applications such as transmit/receive switching, gain control, and attenuation control. With high isolation of up to 110 dB, low insertion loss, and excellent power handling capability, it is the ideal choice for various RF applications.

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