HMC347G8TR

Test Frequency:	8GHz, 6GHz
Base Part Number:	HMC347
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Operating Temperature:	-55°C ~ 85°C
Voltage - Supply:	--
Impedance:	50 Ohm
Features:	--
IIP3:	43dBm
P1dB:	--
Series:	--
Insertion Loss:	2.2dB
Isolation:	25dB
Frequency Range:	0Hz ~ 8GHz
Circuit:	SPDT
Topology:	Absorptive
RF Type:	VSAT
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF Switches

RF switches are electronic devices used to select one or more RF signal paths for signal transmission. They are frequently used in communications, networking and other RF applications where signal routing is required. The HMC347G8TR is a high-performance, high linearity, monolithic SPDT switch developed using Hittite Microwave Corporation’s (HMC’s) proprietary Monolithic Microwave Integrated Circuit (MMIC) technology.

HMC347G8TR Application

The HMC347G8TR is most commonly used in applications where wide frequency and power handling is needed. It can switch an RF signal from one path to another in less than 1000ns with excellent VSWR performance – 1.1:1 at 10GHz and Insertion loss of 1.2dB. The HMC347G8TR provides low distortion and excellent linearity up to a power level of +29dBm and frequencies ranging from 3GHz to 8GHz. It supports a very wide range of input power levels, from -55dBm up to +29dBm, and can be used in applications such as RF and microwave signal routing, filter switching and antenna switching.

Working Principle

The HMC347G8TR works by switching RF signals from one path to another using an input control signal. The control signal is used to determine which output port the signal will be routed to. The control is realized through a PIN diode, which is a two-terminal semiconductor device, and the PIN diode acts as a switch and then actuates two gallium arsenide FETs (GAFETs). The two GAFETs are connected in parallel to increase current handling capability. When the control signal is applied, it reverses the bias of the PIN diode which then turns the two FETs On or Off. If the FETs are both On, then the RF signal is routed to the output port, otherwise it is routed to the other output port. The device offers fast switching of the RF signal, with switching times of less than 1000ns, which is ideal for applications such as filter switching and antenna switching.The HMC347G8TR can be used in wide range of applications, from mobile base station antenna systems, Wi-Fi switching, satellite communications, microwave links and more. The device offers excellent performance, with wide frequency and power handling capabilities. It is one of the leading RF switches available today, and its small footprint makes it a cost effective solution for many RF switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description