HMC361S8G

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The HMC361S8G is a high performance gallium arsenide monolithic microwave integrated circuit (MMIC) amplifier, which is designed to operate in the DC to 8GHz frequency range. The amplifier is suitable for both commercial and military applications such as cellular base station radios, point-to-point and point-to-multi-point radio systems, radar transmitters, and general purpose test and measurement equipment. The device integrates a gain stage, designed for wide dynamic range and high output intercept, with a power amplifier and associated RF switching circuitry on a single die.

The HMC361S8G is an ideal choice for systems that need to operate over a wide frequency range, requiring high linearity and high gain performance. The amplifier has a high linearity of 10 dBm PAE at P1dB. The high gain and excellent linearity makes the device an excellent choice for applications that require a broad bandwidth amplification with minimal power consumption.

The HMC361S8G features a unique circuit design that combines traditional high performance amplifier architecture with a LDMOS device for improved linearity and gain performance. The amplifier is capable of providing up to +20 dBm of saturated RF output power when powered by a +9V to +15V DC supply. The output power is adjustable from +3dBm to +20 dBm by adjusting the supply voltage between 0V and +15V. The amplifier also features a selectable RF gain control, allowing users to control the gain of the amplifier from 20 dB to 50 dB.

The device also provides high IP3 linearity and low NF, resulting in very low distortion levels. The high linearity and low distortion make the amplifier suitable for high dynamic range systems. The amplifier also features a wide temperature range operation of -55°C to +125°C. The he HMC361S8G is designed for low power consumption, and is optimized for military and aerospace applications.

Overall, the HMC361S8G is a high performance, low-cost gallium arsenide MMIC amplifier designed to operate over a wide frequency range in the DC to 8GHz range. The device combines traditional amplifier architecture with a high-performance LDMOS device for improved linearity and gain, and offers excellent power efficiency. The amplifier is capable of providing up to +20 dBm of saturated RF output power with adjustable gain control capabilities. The high linearity and low NF make the amplifier an excellent choice for RF applications that require a wide dynamic range.

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