Allicdata Part #: | IF-HN08-ND |
Manufacturer Part#: |
IF-HN08 |
Price: | $ 395.01 |
Product Category: | Optoelectronics |
Manufacturer: | Industrial Fiberoptics |
Short Description: | LASER HELIUM NEON .8MW CLASS II |
More Detail: | Laser Diode 633nm 0.8mW 12 V ~ 18 V 650mA Housed U... |
DataSheet: | IF-HN08 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 359.10000 |
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Wavelength: | 633nm |
Voltage - Input: | 12 V ~ 18 V |
Current Rating: | 650mA |
Power (Watts): | 0.8mW |
Package / Case: | Housed Unit, Educational |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Laser diodes are commonly used as the active element in many industrial, commercial, medical, and consumer applications. They offer numerous benefits over traditional light sources, including a greater efficiency, increased light intensity, and the ability to emit broader spectral ranges. The IF-HN08 is one such laser diode module that is used for numerous applications. This article will discuss the application field and working principle of the IF-HN08.
The IF-HN08 laser diode module is used in a variety of applications, ranging from medical and industrial applications to telecommunications and entertainment. For medical applications, the IF-HN08 is used to perform precision incisions and ablation, phototherapy, and tissue imaging. In industrial applications, the IF-HN08 is used in laser welding, cutting, engraving, printing, and other forms of surface treatment. Furthermore, the IF-HN08 is used for telecommunications applications such as a rangefinder and as a marker in free-space optical communication links. Finally, the IF-HN08 is used in entertainment applications such as laser light shows, special effects, and lighting for stage performances.
The IF-HN08 laser diode module is a monolithic laser diode module based on a gallium arsenide (GaAs) active layer. The semiconductor laser structure typically includes a substrate, such as a silicon wafer, a cap layer, a cladding layer, and an active layer of gallium arsenide. A junction is formed between the cap layer and active layer, which is used to create the light emission. The emission can be either coherent or non-coherent depending on the type of laser diode.
The IF-HN08 works by passing a current through the semiconductor structure, which then recombines holes and electrons in the active layer, emitting a photon in the process. This process of recombination and emission is known as stimulated emission, and the emitted photons make up the laser beam. The beam is then directed by an optical cavity or a lens, which collimates or focusses the beam. The beam is then modulated by a beam steering mechanism, such as a mirror, to create the desired effect.
The IF-HN08 laser diode module offers an unprecedented level of performance and flexibility in a wide range of industrial and consumer applications. The IF-HN08 is designed to withstand extreme conditions, which make it ideal for a variety of demanding applications. Additionally, the IF-HN08 is easily integrated into existing designs, making it a cost-effective choice for many environments. With its superior efficiency and performance, the IF-HN08 laser diode module is sure to become an essential part of many modern laser systems.
The specific data is subject to PDF, and the above content is for reference
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