IS42S16100E-7B

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	16Mb (1M x 16)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	60-TFBGA
Supplier Device Package:	60-TFBGA (6.4x10.1)

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IS42S16100E-7B Applications and Working Principle

The IS42S16100E-7B is a Dynamic random access memory (DRAM) that is well suited for many applications. This particular DRAM is specifically used for high-density applications, such as servers and data centers. Additionally, this DRAM can be used for numerous consumer applications, such as digital cameras and smartphones.

The Memory Categories

Memory is typically broken down into two categories - Static Random Access Memory (SRAM) and DRAM. DRAM is a type of memory that is used for many everyday applications. Fundamental differences exist between the two types of memory. A primary difference is that DRAM uses a transistor and capacitor pair for a single unit whereas SRAM technology is based on flip-flops.

DRAM Overview

DRAM memory is composed of a large number of memory cells that are arranged in a grid-like fashion. Each cell within the grid contains either a zero or a one. Data is written to and read from the grid in order to store or retrieve data as needed. The main advantage of DRAM memory is that it is very cost effective, as compared to SRAM memory. It is also much denser, allowing for a lot more data to be stored in a smaller space.

Advantages of DRAM

The IS42S16100E-7B DRAM memory offers a number of advantages. Firstly, its high density ensures that more data can be stored in a smaller area. This is key for applications where space is limited. Additionally, its cost-effectiveness makes it a popular choice for many applications. It also has a low power consumption, which makes it well-suited for applications that require long-term data storage without fail. Finally, its speed and reliability make it an attractive option for many computing applications.

IS42S16100E-7B Applications

The IS42S16100E-7B was designed for applications that require high-density data storage. Examples of these applications include servers, data centers, and large-scale computing applications. It is also used in consumer applications such as digital cameras and smartphones.

IS42S16100E-7B Working Principle

The IS42S16100E-7B DRAM operates in a very similar way to other DRAM memory chips. The basic principle of operation is as follows. In order to store data, the memory cell must be charged up using a pulse of electricity. Data is then written to the cell by adjusting the voltage across the cell. When data is requested, the voltage difference is measured and converted into a digital signal. This basic concept is used in all types of DRAM memory. What makes the IS42S16100E-7B unique is its speed and reliability. The high-density memory cells are all connected to a low power control circuit, which allows for quick and efficient data storage and retrieval. Additionally, the solid-state nature of the memory cells gives it a very reliable performance, even when subjected to extreme conditions.

Conclusion

The IS42S16100E-7B is a dynamic random access memory (DRAM) that is well suited for many applications. Its high-density and cost-effectiveness make it an attractive option for many applications, such as servers, data centers, and consumer applications, such as digital cameras and smartphones. The basic principle of operation is the same as other DRAM memory chips and its speed and reliability set it apart from the competition.

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