IS42S32200C1-7B Allicdata Electronics
Allicdata Part #:

IS42S32200C1-7B-ND

Manufacturer Part#:

IS42S32200C1-7B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 64M PARALLEL 90BGA
More Detail: SDRAM Memory IC 64Mb (2M x 32) Parallel 143MHz 5.5...
DataSheet: IS42S32200C1-7B datasheetIS42S32200C1-7B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-BGA (13x8)
Description

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The IS42S32200C1-7B is a type of dynamically operated random access memory (DRAM), which is a category of memory that manufacturers use to create computer RAM. DRAM is used in a variety of different applications, including computers, where it is used both as primary memory and as secondary memory, as well as other electronic devices, such as gaming consoles, cell phones, and digital cameras.

The IS42S32200C1-7B is unique because it is a synchronous type of DRAM, which means that it operates using a synchronous clock signal to regulate the sequence of read and write operations on the memory. This type of device is used whenever a system needs to access data quickly and reliably.

The main principle behind the operation of a synchronous DRAM is the notion of a refresh cycle. During a refresh cycle, the DRAM\'s memory cells, which are arranged in a grid of rows and columns, are read from and written to in order to maintain the integrity of the data within the memory. This is accomplished by applying a series of voltages to the cells, which in turn cause the contents of the cells to be read. Once the contents of each cell have been read, they are then written back, which refreshes the memory.

The data that is stored within the memory is organized into pages, which each have a defined size. Each page can contain up to 8192 bytes of data, which can represent a various number of instructions and data points.

The IS42S32200C1-7B is also unique in that it combines DRAM and static random access memory (SRAM) technologies into a single memory device. DRAM is used as the primary memory, while SRAM is used as the secondary memory. This configuration of memories provides the system with both speed and capacity, making it ideal for applications that require both.

The IS42S32200C1-7B also has the advantage of being able to accept memory refresh commands from outside the system. This is accomplished by using data strobe and address strobe signals from another device, such as a microcontroller, which can be used to initiate refresh cycles as needed.

The IS42S32200C1-7B is also able to operate in a self-refresh mode, which allows it to remain active even when the system is shut down or in a low-power state. This makes the device ideal for a wide range of applications, including those that require the memory to remain active even when the system is not.

In summary, the IS42S32200C1-7B is a synchronous DRAM device that combines DRAM and SRAM technologies into a single memory device. It operates using a refresh cycle, which ensures that the data contained within it is accurate, and it can be used in a variety of different applications, including computers, cell phones, digital cameras, and gaming consoles. Additionally, it has the advantage of being able to accept memory refresh commands from outside devices, as well as the ability to operate in a self-refresh mode, making it a highly versatile and reliable memory device for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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