IS42S32400E-6BLI-TR Allicdata Electronics
Allicdata Part #:

IS42S32400E-6BLI-TR-ND

Manufacturer Part#:

IS42S32400E-6BLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 90TFBGA
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5....
DataSheet: IS42S32400E-6BLI-TR datasheetIS42S32400E-6BLI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

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IS42S32400E-6BLI-TR application field and working principle

IS42S32400E-6BLI-TR is a type of memory chip which is in the SDRAM family. It is an IC type which has 4 banks of 4M x 4 Synchronous DRAMs. It has a maximum transfer rate of 10 ns. It has a power consumption of 6 V and a maximum operating temperature of 85 °C. The Device Organization is x4.

Applications

IS42S32400E-6BLI-TR is used in many different applications. It is commonly used in embedded systems as it can provide higher speeds and enhanced performance. It is also used in storage applications such as storage area networks (SANs), cloud storage, flash memory devices and disk controllers. Additionally, the memory chip is used in a wide range of industrial applications, such as automotive, aerospace and telecommunications.

Working principle

The IS42S32400E-6BLI-TR operates by using memory cells. These cells are made up of semiconductors and are connected to each other and the main memory control circuitry. When a command is sent to the memory, the control circuitry is responsible for interpreting the command and sending the appropriate signals to the cells. The cells then execute certain operations based on the signals. This process is known as memory access. Once the access is complete, the data is retrieved from the memory cells and sent to the original command sender.

The data stored in the memory is organized into fixed-length blocks, also known as pages. As the size of a page is fixed, the amount of data that can be stored in the memory is limited. Data can be written to, or read from, the memory locations in either random or sequential order. This type of access, known as random access memory (RAM), is used in a large range of applications.

The IS42S32400E-6BLI-TR has an additional layer of complexity due to its Synchronous DRAM (SDRAM) technology. With SDRAM technology, each memory cell contains multiple bits of data, which are organized in a particular order. Each memory location is known as a cell and contains two data bits. This enables the memory to encode and decode data much quicker than traditional RAM technologies.

On top of this, the IS42S32400E-6BLI-TR has a self-refresh mode which ensures the data stored in the memory remains valid. During the self-refresh process, the control circuitry refreshes the data held in the cells in order to prevent data loss. This is an important feature, as it ensures that data stored in the memory is always valid and reliable.

Conclusion

The IS42S32400E-6BLI-TR memory chip is an IC type which offers a number of benefits to its users. With its high-speed and efficient operation, this type of memory is suitable for a range of applications. Additionally, the chip\'s self-refresh mode helps to ensure data integrity is maintained. Therefore, the IS42S32400E-6BLI-TR memory chip is an ideal solution for industrial, storage and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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