IS42SM32160C-7BLI-TR Allicdata Electronics
Allicdata Part #:

IS42SM32160C-7BLI-TR-ND

Manufacturer Part#:

IS42SM32160C-7BLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 90WBGA
More Detail: SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel...
DataSheet: IS42SM32160C-7BLI-TR datasheetIS42SM32160C-7BLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (16M x 32)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)
Description

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Memory is an essential component in any digital system, whether it is for data storage or system operation. IS42SM32160C-7BLI-TR is one such well-known integrated circuit that serves as a memory. This article discusses the applications and working principles of IS42SM32160C-7BLI-TR.

IS42SM32160C-7BLI-TR is a synchronous static random access memory (SRAM) manufactured by ISSI and is part of their low power series. It offers 160K bits of storage, consisting of 64K words organized into four independant banks, each can be independently addressed. This is a dual voltage device with an operating voltage of ±2.7V to ±3.6V. It can operate from a maximum frequency of 100MHz and a minimum frequency of 2MHz, with a temperature range of 0°C to 70°C.

IS42SM32160C-7BLI-TR is mainly used in consumer, industrial, automotive and networking applications. In consumer applications, it can be used for memory functions such as gaming, system and code storage. It can be used for digital signal processors (DSPs) in industrial applications, providing the efficient and fast operations required. In automotive applications, it can be used as RAM for navigation systems and other automotive controller applications, while in networking applications, it can be used in LAN, router and gateway memory applications.

The working principle of IS42SM32160C-7BLI-TR, like most dynamic RAMs, is that it uses a voltage-controlled switch to transfer data in and out of the chip, and is available in 1-bit, 4-bit and 8-bit configurations. The chip stores two bits per memory cell, which is then accessed through a connection to the voltage-controlled switch. When the correct voltage is applied, the switch opens and the data is transferred to the output pin. This data can then be used by other parts of the system, such as an address counter. The data is then stored in the memory cell until it is required. In order to access the data, the chip must cycle through the address counter and apply the correct voltage to the memory cells.

IS42SM32160C-7BLI-TR offers several features that add to its versatility and make it suitable for a number of applications. These features include burst mode operation, pipelined operation, power-down mode and operating refresh cycle. The burst mode operation allows the chip to access data from a continuous location, such as from the center of a section of the chip rather than from the beginning or the end. This helps reduce latency. The pipelined operation feature allows multiple memory sections to be accessed simultaneously; this decreases access time further. The power-down mode allows the chip to save power by automatically switching off in periods of inactivity, while the operating refresh cycle helps to prevent data corruption.

In conclusion, IS42SM32160C-7BLI-TR is an ideal memory for a variety of applications due to its dual voltage operation, fast access times, low power consumption and a range of features that can be used to further reduce latency and improve power efficiency. It can be used in consumer, industrial, automotive and networking applications, and its working principle involves the use of voltage-controlled switches and memory cells in order to access and store data.

The specific data is subject to PDF, and the above content is for reference

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