IS46R16320D-5TLA1-TR Allicdata Electronics
Allicdata Part #:

IS46R16320D-5TLA1-TR-ND

Manufacturer Part#:

IS46R16320D-5TLA1-TR

Price: $ 7.01
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 20...
DataSheet: IS46R16320D-5TLA1-TR datasheetIS46R16320D-5TLA1-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 6.37169
Stock 1000Can Ship Immediately
$ 7.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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The IS46R16320D-5TLA1-TR is a type of dynamic random access memory (DRAM) developed by ISSI, a US manufacturer of memory products. This chip is a member of the rising series of high-speed, low-latency DRAMs from ISSI, and provides high performance operation for applications that require maximum data throughput in memory systems. In this article, we will discuss the applications and working principles of the IS46R16320D-5TLA1-TR DRAM.

The IS46R16320D-5TLA1-TR DRAM is a DDR4 device with a rated speed of 3200 MT/s, operating at 1.2V and with a capacity of 32 GB/module. It is designed to provide a cost-effective alternative to servers, laptops, and other desktop systems that are seeking maximum performance. The device has a refresh cycle rate of 7.8 μs, and a refresh algorithm of self-refresh. It is built on a 16nm low power process for improved power efficiency and is compliant with the JEDEC DDR4 standard.

The IS46R16320D-5TLA1-TR DRAM can be used in a wide range of applications, such as in servers, laptops, and other high-performance systems that need maximum throughput in memory systems. It is also well-suited for gaming systems and other applications that demand maximum performance and low latency. For laptop users, this DRAM is an ideal solution for increasing system response time and reducing power consumption, since its low power profile can help reduce system noise and heat. Additionally, the high bandwidth and low latency of this device makes it suitable for a variety of other applications, such as video editing, virtual reality, and scientific computing.

In terms of working principle, the IS46R16320D-5TLA1-TR DRAM comprises of a set of memory cells that store data. The device relies on a patented Multi-Level Cell (MLC) technology to store multiple bits in a single cell, enabling denser and more power-efficient memory solutions. When the memory controller receives a read or write request, it makes use of the burst mode for faster data transmission. Data is written to or retrieved from the device in bursts of four words at a time. After each read or write request, the controller issues a refresh command to ensure optimized data retention and reliability.

In conclusion, the IS46R16320D-5TLA1-TR DRAM from ISSI is a powerful and low-power device that is ideally suited for memory-intensive applications seeking maximum performance. Its MLC technology and burst mode operation enable higher performance and improved power efficiency, making it suitable for applications such as gaming, video editing, virtual reality, and scientific computing. Furthermore, its refresh algorithm of self-refresh is designed to ensure optimal data retention and reliability.

The specific data is subject to PDF, and the above content is for reference

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