IS46TR16128BL-15HBLA2 Allicdata Electronics
Allicdata Part #:

IS46TR16128BL-15HBLA2-ND

Manufacturer Part#:

IS46TR16128BL-15HBLA2

Price: $ 9.08
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 2G PARALLEL 96TWBGA
More Detail: SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 6...
DataSheet: IS46TR16128BL-15HBLA2 datasheetIS46TR16128BL-15HBLA2 Datasheet/PDF
Quantity: 1000
190 +: $ 8.25594
Stock 1000Can Ship Immediately
$ 9.08
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a widely used form of computer data storage. Different memory types can be broadly classified as random access memory (RAM) and read-only memory (ROM). The IS46TR16128BL-15HBLA2 is an example of a specific type of RAM called synchronous dynamic random access memory (SDRAM).

SDRAM is most commonly used as the main memory in personal computers. It is used for applications such as multimedia and digital imaging, where large amounts of data need to be rapidly accessed by the system. It is also increasingly used in industrial embedded applications with high-performance computing requirements, such as robotics, machine vision, and traffic control.

The IS46TR16128BL-15HBLA2 is an example of a modern SDRAM module. It is a 16-megabit device, containing 1.28 megabytes, organized as 16 megawords of 8 bits each. It is constructed using a 300 millimeter CMOS technology, and packaged in a 48-pin PLCC plastic leaded chip carrier (PLCC) package. The module also features synchronous input/output, programmable burst lengths, and a 4-bit prefetch architecture.

The working principle of SDRAM is based on the idea of refreshing cells. When a cell is read, it must be refreshed (rewritten) to keep its contents. This refresh process is handled automatically by the memory controller, though the refresh rate is user-defined. As the data rate of the operating system increases, so does the refresh rate, which results in improved performance.

Modern SDRAM devices such as the IS46TR16128BL-15HBLA2 also support new technologies such as data on/off chip, data burst, and array self-refresh, which provide additional performance enhancements. Data on/off chip allows data to be transferred between two chips without using the main memory bus. Data burst allows the system to access data stored in the memory in blocks, as opposed to individual bytes. Array self-refresh is a way of refreshing the memory cells without having to use the memory controller. This is especially useful in battery-powered devices, as it reduces power consumption.

In summary, the IS46TR16128BL-15HBLA2 is an example of a modern SDRAM module, suitable for a variety of applications where performance and power efficiency are important considerations. It features an array of new technologies to improve memory performance, including data on/off chip, data burst, and array self-refresh. The working principle of SDRAM is based on the concept of refreshing cells, which is handled automatically by the memory controller.

The specific data is subject to PDF, and the above content is for reference

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