IS46TR16640AL-125JBLA1 Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IS46TR16640AL-125JBLA1 is a DRAM (Dynamic Random Access Memory) device, specifically a fast-page mode, 4M x 16bits CMOS DRAM module. It is an ideal choice for a wide range of applications that require high capacity memory.

The IS46TR16640AL-125JBLA1 is optimized for applications such as high throughput digital signal processing, embedded systems, and networking equipment. It offers a 256K x 16 bits of fast page mode DRAM, with a low-collected-current module, a high-speed data access time of 40ns or less, and a burst delay of 6 clocks. By using two words per clock, the IS46TR16640AL-125JBLA1 can easily sustain a 400 MB/s transfer rate.

The IS46TR16640AL-125JBLA1 also has excellent system compatibility. It can be used in multiple systems such as microcontrollers, system-on-chips (SoCs), microprocessors, and system controllers. The module is designed to provide high speed data access with minimal interference from other devices. It also incorporates an auto refresh feature that enables the system to maintain high reliability.

The working principle of the IS46TR16640AL-125JBLA1 is based on the principle of dynamic random access memory (DRAM) that is widely used in modern computing. In this type of memory, a charge-refreshing technique is used to store data without the need to use extremely fast electronic switches. This memory typically stores data in the form of an array of memory cells, each of which contains an individual capacitor and transistor.

The working of the DRAM relies on the capacitor sweeping and the refresh of the charges in the memory cells. This operation is triggered by the internal devices such as DRAM controller, memory buffering logic etc. During a write operation, the charges on the memory cells are swept to a certain state and as the data is written, the capacitor charge is changed. When a read operation is requested, the charges in the memory cells are refreshed, thus making it possible to read out the stored data.

In addition, the IS46TR16640AL-125JBLA1 operates on low-collected-current principle, allowing it to work efficiently in a wide variety of conditions. The module has an auto-refreshing feature which keeps the memory reliable even under adverse conditions.

The IS46TR16640AL-125JBLA1 is an excellent choice for applications such as high throughput digital signal processing, embedded systems, and networking equipment. It offers fast page mode DRAM with a low-collected-current module, an ultra-fast data access time, and a burst delay of 6 clocks. With its ability to operate with low-collected-current and its auto-refreshing feature, the IS46TR16640AL-125JBLA1 is a reliable and efficient memory device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference