IS46TR16640B-125JBLA1

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3
Memory Size:	1Gb (64M x 16)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.425 V ~ 1.575 V
Operating Temperature:	-40°C ~ 95°C (TC)

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IS 46TR16640B-125JBLA1 is a type of series dynamic random access memory class of integrated circuits. It is a kind of extremely high-speed, multi-function volatile memory, allowing fast access to stored data, and providing a large storage area compared to static RAM (SRAM), thus making it an ideal choice for consumer electronics applications. This particular type of SRAM is especially suited for use in consumer electronics such as audio systems and digital cameras, due to its extremely low power consumption and fast transfer speed.The IS 46TR16640B-125JBLA1 is a 16MB memory device that operates using a 1.5V dual voltage power source. It has a maximum 1000MHz burst synchronous dynamic random access memory (SDRAM) data rate and 25ns cycle time. The device also features an internal error correcting code (ECC), and is suitable for low power applications.The IS 46TR16640B-125JBLA1 operates by reading and writing data to the cell array that is connected to a command and address bus, allowing it to take requests from the CPU and execute them. When data is written to the SDRAM, it is first written to an internal latch or buffer, wherein it is verified and checked by an ECC. This ECC also serves as a means of recovering previously stored and corrupted data.The SDRAM also utilizes an internal clock, which regulates the read/write cycles and enables independent device timing, allowing multiple devices to be operated simultaneously without interfering with each other\'s data. Furthermore, the SDRAM supports dynamic random-access memory self-refresh (DRAM Self-refresh),which allows the device to keep itself in a Self-refresh mode when it is not in use, thus preserving the data stored in the device and consuming less power in the process.In addition, the IS 46TR16640B-125JBLA1 includes a multicell data latch which is used to improve the speed of the memory device. The multicell data latch allows data to be written in two-stages; first, data is written to the data buffer, then it is transferred to the cell array and stored. This way, the overall time to store data is considerably reduced.The IS 46TR16640B-125JBLA1 offers several advantages over other types of SDRAM, such as higher access speeds and improved memory capacity. Additionally, the power consumption of the device is extremely low, making it an ideal choice for mobile and battery-powered devices. The device is also designed to provide high-accuracy data read/write cycles, ensuring accurate and reliable data transfers. The combination of all these features makes the IS 46TR16640B-125JBLA1 an ideal memory device for use in consumer electronics.

IS46TR16640B-125JBLA1 Application Field and Working Principle

IS 46TR16640B-125JBLA1 is a type of series dynamic random access memory class of integrated circuits. It is a kind of extremely high-speed, multi-function volatile memory, allowing fast access to stored data, and providing a large storage area compared to static RAM (SRAM), thus making it an ideal choice for consumer electronics applications. This particular type of SRAM is especially suited for use in consumer electronics such as audio systems and digital cameras, due to its extremely low power consumption and fast transfer speed.

The IS 46TR16640B-125JBLA1 is a 16MB memory device that operates using a 1.5V dual voltage power source. It has a maximum 1000MHz burst synchronous dynamic random access memory (SDRAM) data rate and 25ns cycle time. The device also features an internal error correcting code (ECC), and is suitable for low power applications.

The IS 46TR16640B-125JBLA1 operates by reading and writing data to the cell array that is connected to a command and address bus, allowing it to take requests from the CPU and execute them. When data is written to the SDRAM, it is first written to an internal latch or buffer, wherein it is verified and checked by an ECC. This ECC also serves as a means of recovering previously stored and corrupted data.

The SDRAM also utilizes an internal clock, which regulates the read/write cycles and enables independent device timing, allowing multiple devices to be operated simultaneously without interfering with each other\'s data. Furthermore, the SDRAM supports dynamic random-access memory self-refresh (DRAM Self-refresh),which allows the device to keep itself in a Self-refresh mode when it is not in use, thus preserving the data stored in the device and consuming less power in the process.

In addition, the IS 46TR16640B-125JBLA1 includes a multicell data latch which is used to improve the speed of the memory device. The multicell data latch allows data to be written in two-stages; first, data is written to the data buffer, then it is transferred to the cell array and stored. This way, the overall time to store data is considerably reduced.

The IS 46TR16640B-125JBLA1 offers several advantages over other types of SDRAM, such as higher access speeds and improved memory capacity. Additionally, the power consumption of the device is extremely low, making it an ideal choice for mobile and battery-powered devices. The device is also designed to provide high-accuracy data read/write cycles, ensuring accurate and reliable data transfers. The combination of all these features makes the IS 46TR16640B-125JBLA1 an ideal memory device for use in consumer electronics.

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