IS46TR16640B-15GBLA2-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3
Memory Size:	1Gb (64M x 16)
Clock Frequency:	667MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.425 V ~ 1.575 V
Operating Temperature:	-40°C ~ 105°C (TC)

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IS46TR16640B-15GBLA2-TR Memory: Application Field and Working Principle

The IS46TR16640B-15GBLA2-TR is a memory device built in a 240-pin, small outline dual in-line memory module (SODIMM). It features advanced DDR2 technology and leverages many years of research and development to offer improved speed, increased capacity, and enhanced performance. As such, the device is ideal for applications needing fast and effective data transfer.

Features of IS46TR16640B-15GBLA2-TR

The IS46TR16640B-15GBLA2-TR offers a variety of features, including high-speed data cycles, flexible timing control, and low power consumption. It also features an enhanced data transfer rate of 12.8 GB/s, a data transfer rate of up to 7.8 GB/s, and a memory latency of 64 cycles. In addition, it supports Power Down mode, which reduces power consumption when the system is idle.

Application Fields for IS46TR16640B-15GBLA2-TR

The IS46TR16640B-15GBLA2-TR is designed for a variety of applications, from simple data storage applications to more complex digital and communication systems. It is especially well-suited for embedded systems, industrial systems and digital signal processing (DSP) applications. With its high-speed cycle and low power consumption, it is also an excellent choice for applications such as mobile telecommunications, PC systems, and mobile gaming.

Working Principle of IS46TR16640B-15GBLA2-TR

The IS46TR16640B-15GBLA2-TR\'s working principle is based on the asynchronous DRAM (A-DRAM) architecture. This architecture enables the device to handle random access memory (RAM) operations and data transfer at faster speeds with greater reliability. This is because, unlike traditional synchronous DRAM (S-DRAM) architectures, A-DRAM does not need to wait for a clock signal to process data. The A-DRAM architecture also offers many benefits over traditional DRAM architectures. For example, it provides increased storage capacity and improved data throughput, along with shorter access times and lower power consumption. Additionally, the IS46TR16640B-15GBLA2-TR supports multiple data cycles, allowing it to process multiple requests simultaneously.Finally, the IS46TR16640B-15GBLA2-TR is designed with an integrated array of error correction codes (ECCs) to detect and correct any data errors that may occur during data transfers. The ECCs help to maintain data integrity and reliability by detecting, repairing, and correcting errors.

Conclusion

The IS46TR16640B-15GBLA2-TR is a high-performing memory device built on advanced DDR2 technology. It features increased data transfer rates and improved speed, along with low power consumption and flexible timing control. It is designed for a range of applications, including embedded systems, industrial systems, DSP systems, mobile telecommunications, and PC and gaming systems. The device leverages the advantages of the asynchronous DRAM architecture to offer increased storage capacity, improved data throughput, shorter access times, and lower power consumption. Finally, the integrated ECCs ensure data integrity and reliability by detecting, repairing, and correcting errors.

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