ISL9V2040S3S

Switching Energy:	--
Base Part Number:	ISL9V2040
Supplier Device Package:	TO-263AB
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	300V, 1 kOhm, 5V
Td (on/off) @ 25°C:	-/3.64µs
Gate Charge:	12nC
Input Type:	Logic
Series:	EcoSPARK®
Power - Max:	130W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 4V, 6A
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	430V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

ISL9V2040S3S belongs to the single IGBTs transistors category. It is a high power and high frequency product of Intersil, which is developed to provide excellent and reliable performance. This product has been carefully designed to meet the high reliability requirements of various applications and provides a lower cost alternative. The ISL9V2040S3S can be used in a wide range of applications like power conversion, high power switching, scooters, electric vehicles, solar and wind power.

ISL9V2040S3S Application Fields

ISL9V2040S3S can be applied to almost every single power conversion and high power switching applications. For examples, ISL9V2040S3S can be used in rapidly developing markets like electric car starter, scooters, electric vehicles, or power supplies for photovoltaic systems. It is ideal for products where there is a need for a wide range of voltage operating conditions and high frequency operating. The ISL9V2040S3S can also be used for other applications like home appliances, LEDs, and industrial rectifiers. It is also an excellent choice for medical equipment requiring high power efficiency and reliability.

ISL9V2040S3S Working Principle

ISL9V2040S3S has a single IGBTs structure and is based on the unique Intersil’s Bipolar-MGFET technology which allows for exceptional performance. It consists of a main transistor and parasitic FET along with an Anti-Parallel diode within one central package. The main transistor switches the current while the parasitic FET ensures a low-loss switch-off behavior. Moreover, the Anti-Parallel diode helps to protect the main transistor and improves the internal cooling in critical operating conditions.The unique structure of ISL9V2040S3S effectively reduces switching losses at low voltage operation, making it a perfect choice for applications that require low conduction loss, low EMI emission, and a wide range of operating conditions. In addition, ISL9V2040S3S has a high power density, making it an ideal choice for high frequency switching applications. Furthermore, this product has an integrated gate driver, which provides precise and accurate gate control, reducing gate ringing and EMI emission. Furthermore, its small size and high power density allow for a small PCB footprint, contributing to the power system\'s overall thermal efficiency.

Conclusion

In conclusion, ISL9V2040S3S is an ideal solution for high power switching applications and provides excellent reliability and performance in a wide range of operating environments. It comes with an integrated gate driver which allows for precise gate control and lower EMI emission. Moreover, its small size and high power density allows for a small PCB footprint and higher operating efficiency. Based on Intersil\'s unique Bipolar-MGFET technology, ISL9V2040S3S offers impressive low conduction and switching losses at lower voltage conditions. It is an excellent choice for electric vehicles, solar, and wind power applications and provides high reliability in all these applications.

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