Allicdata Part #: | ISL9V5036S3-ND |
Manufacturer Part#: |
ISL9V5036S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 390V 46A 250W TO262AA |
More Detail: | IGBT 390V 46A 250W Through Hole TO-262AA |
DataSheet: | ISL9V5036S3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | EcoSPARK® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 390V |
Current - Collector (Ic) (Max): | 46A |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 4V, 10A |
Power - Max: | 250W |
Switching Energy: | -- |
Input Type: | Logic |
Gate Charge: | 32nC |
Td (on/off) @ 25°C: | -/10.8µs |
Test Condition: | 300V, 1 kOhm, 5V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
Base Part Number: | ISL9V5036 |
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ISL9V5036S3 Application Field and Working Principle
The ISL9V5036S3 is a dual high-speed HEXFET® Power MOSFET from Intersil Corporation. It is a single, low-capacitance, low-gate charge, N-channel MOSFET transistor providing high efficiency and high power transfer while reducing power dissipation. The ISL9V5036S3 is an insulated-gate bipolar transistor (IGBT) with a voltage rating of 50V, and an on-state RDS(on) of 3Ω. It is packaged in the industry standard SOIC-8 (Small Outline Integrate Circuit) package.
The ISL9V5036S3 is generally used in applications such as audio amplifiers, switching frequency converters, high-performance DC-DC converters, motor control and power supply applications. Its low gate charge and capacitively limited dissipation capability make it a preferred choice for these applications. With its high power transfer efficiency, the ISL9V5036S3 can provide up to 95% efficiency in typical applications.
The ISL9V5036S3 is designed to work with a low-voltage gate and a low-on-resistance MOSFET switch and provide a wide range of instantaneous power to a load. It operates by quickly charging the gate to the gate voltage. A high voltage from the gate control will quickly switch the MOSFET and allow a low-voltage source to supply power to the load at a low impedance. Once the required gate voltage is reached, the MOSFET switch remains in the on-state and the ISL9V5036S3 will continue to transfer power to the load.
The ISL9V5036S3 is an effective way to reduce power dissipation since the on-state resistance is much lower than that of other power MOSFETs. Additionally, the low gate charge enables it to switch faster than other power MOSFETs and thus, allows for faster switching at higher frequencies. Finally, the high power transfer efficiency allows for higher efficiency in power conversion to the load. This makes it a great choice for many different applications.
The ISL9V5036S3 is a single IGBT with a high-voltage rating, low-capacitance, low-gate charge, and low-on-state resistance that makes it ideal for applications requiring fast switching at high efficiency. Its reduced power dissipation enables power saving, high power transfer efficiency increases conversion efficiency, and low gate charge enables faster switching for increased speeds. This makes the ISL9V5036S3 a great choice for many applications such as audio amplifiers, switching frequency converters, DC-DC converters, motor control, and power supply applications.
The specific data is subject to PDF, and the above content is for reference
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