ISL9V5036S3ST_SB82026C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ISL9V5036S3ST/SB82026C is a type of IGBT or insulated gate bipolar transistor. Like other IGBTs, it is a power device capable of high frequency switch mode operation with low conduction losses and low switching times. The insulation between the emitter and collector of the IGBT allows it to be used in sensitive applications, such as the control of motor speed, AC servo drives and power electronics.

The ISL9V5036S3ST/SB82026C uses an epitaxial structure with an N-type base layer, allowing the current to flow from the base to the collector. This means that the device can provide excellent switching performance and fast operation. Compared to alternative switched devices, such as MOSFETs, the IGBT is able to handle higher voltages, meaning that it can be used in more demanding applications.

The primary application field of the ISL9V5036S3ST/SB82026C is DC-DC conversion. This is an important function in the design of power supplies in a variety of electronic systems. By using an IGBT, the current is able to be switched between two different voltage levels. The IGBT is used to control the switching in order to maintain the desired efficiency while minimising the losses. This makes the IGBT a key component in the design of power supplies.

The working principle of the ISL9V5036S3ST/SB82026C is relatively simple. The transistor consists of two terminals - a control terminal (often referred to as the gate) and a collector to emitter terminal (often referred to as the drain). In order to turn the IGBT on, a current needs to be applied to the gate terminal. This will cause an inversion channel to be created between the N-type base layer and the P-type emitter layer, allowing current to flow from the collector to the emitter. In order to turn the IGBT off, the current applied to the gate needs to be removed. This will cause the inversion channel to be destroyed, and the IGBT will no longer be capable of conducting current.

The ISL9V5036S3ST/SB82026C IGBT is a power device capable of high frequency switch mode operation with low conduction losses and low switching times. Its primary application field is DC-DC conversion, enabling current to be switched between two different voltage levels. The device works by applying a current to the gate terminal, which creates an inversion channel and turns the IGBT on. In order to turn the IGBT off, the current applied to the gate must be removed. This makes the IGBT an ideal component for the design of power supplies in a variety of electronic systems.

The specific data is subject to PDF, and the above content is for reference