LR1F51K Allicdata Electronics
Allicdata Part #:

LR1F51K-ND

Manufacturer Part#:

LR1F51K

Price: $ 0.01
Product Category:

Resistors

Manufacturer: TE Connectivity Passive Product
Short Description: RES 51.0K OHM 0.6W 1% AXIAL
More Detail: 51 kOhms ±1% 0.6W Through Hole Resistor Axial Met...
DataSheet: LR1F51K datasheetLR1F51K Datasheet/PDF
Quantity: 1000
4000 +: $ 0.00759
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: LR, Neohm
Packaging: Tape & Box (TB) 
Part Status: Active
Resistance: 51 kOhms
Tolerance: ±1%
Power (Watts): 0.6W
Composition: Metal Film
Features: --
Temperature Coefficient: ±50ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: Axial
Supplier Device Package: Axial
Size / Dimension: 0.091" Dia x 0.244" L (2.30mm x 6.20mm)
Height - Seated (Max): --
Number of Terminations: 2
Failure Rate: --
Description

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LR1F51K through hole resistor is one of the most common components used in almost every application field, such as power, frequency control, current limiting, decoupling and signal conditioning. It is also one of the most cost-effective and reliable components for providing reliable operation in products or systems. In this article, we are going to explain LR1F51K through hole resistor application field and working principle.

Application of LR1F51K Through Hole Resistor

LR1F51K through hole resistor is widely used in various applications due to its stable and reliable performance and low power consumption. It can be used in communication and telecom systems, lighting, power and frequency control, signal conditioning, decoupling, current limiting, switching control, regulated power supply and over-voltage protection. It can also be used for many other applications including temperature measurement, surface mount, vibration control, voltage measurement, monitoring and more.

Working Principle of LR1F51K Through Hole Resistor

The basic principle of a LR1F51K through hole resistor is a metal-oxide-semiconductor (MOS) structure placed between two electrodes. It is composed of a semiconductor material, such as silicon or gallium arsenide, an oxide layer and a metal layer on top. When electric current is applied to the device, it creates a strong electric field between the two electrodes. This electric field causes holes in the oxide layer to be formed, allowing electrons to flow from one electrode to the other.

The size of the hole or the number of electrons that can flow between the two electrodes is determined by the resistance value of the MOSFET. The larger the resistance value, the better the device will be able to handle high voltage and high-frequency applications.

The device also has a gate terminal connected to it, which is used to control the flow of current. By varying the voltage on the gate terminal, the resistance of the MOSFET can be adjusted, allowing the user to control the current flowing through the device.

Conclusion

In conclusion, LR1F51K through hole resistor is an important component which is used for various applications, such as power, communication and telecom systems, current limiting, lighting, frequency control, signal conditioning, decoupling, switching control, voltage measurement and monitoring. Its working principle is based on the MOSFET structure, which is composed of a metal layer, oxide layer and semiconductor material. The size of the hole or the number of electrons that can flow between the two electrodes is determined by the resistance value of the MOSFET. The device also has a gate terminal connected to it, which is used to control the flow of current.

The specific data is subject to PDF, and the above content is for reference

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