M24C01-WMN6T

Write Cycle Time - Word, Page:	5ms
Base Part Number:	M24C01
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	2.5 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	1Kb (128 x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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M24C01-WMN6T Memory Applications and Working Principles

The M24C01-WMN6T is a 1 kilobit (128 x 8bit) EEPROM memory board, designed for embedded applications that require fast and reliable data storage. It is one of the most popular components used in professional embedded systems and is generally available in DIP and SOIC packages. The memory is organized as 8,192 8-bit words of data and can be read or programmed one byte at a time. This feature makes it a powerful and convenient device for many embedded applications.The M24C01-WMN6T is a reliable memory that provides a wide range of advantages, including a 2-wire serial interface, a wide voltage range, low power consumption, and fast write and read access times. It is suitable for use in low-cost, low-power applications, as well as larger and faster embedded projects.The M24C01-WMN6T is a versatile memory board that can be used in embedded systems related to consumer electronics, industrial automation, automotive, retail, and medical applications. Other uses include security images, audio and video recording, medical devices, and portable consumer electronics.The M24C01-WMN6T is a non-volatile memory, meaning that it does not require an external power source for data storage. When power is applied, the device can begin operation almost immediately. To ensure reliable data retention, the device contains sophisticated mechanisms to protect against accidental erasure.The M24C01-WMN6T also features an advanced sleep mode, which enables it to reduce its power consumption to approximately a hundredth of its regular load. The device can be put to sleep at any time, and it will wake up ready for operation when power is applied.The M24C01-WMN6T utilizes an Electrically Erasable Programmable Read Only Memory (EEPROM) architecture. It consists of a series of memory cells, each of which is made up of a floating gate MOSFET transistor. In a given memory cell, the logic level of the bit depends on the charge of the floating gate.Writing data to the M24C01-WMN6T requires two operations: an erase and a write. During the erase operation, a wide voltage range is applied across the memory cells. This voltage temporarily neutralizes the charges on the floating gates by forcing electrons away from them.Then during the write operation, the device applies a voltage range appropriate to the value stored in each byte. If the byte contains a \'1\', a higher voltage is applied to the memory cell, and a lower voltage is applied if the byte contains a \'0\'.The M24C01-WMN6T can be accessed in two modes: random and sequential. In the random mode, each memory cell can be addressed and read or written individually. This mode is ideal for applications where random access of data is required, such as updating or changing data. But in the sequential mode, memory cells can only be accessed in order, which is beneficial for sending or receiving data in a predetermined order.In conclusion, the M24C01-WMN6T is a versatile and reliable memory device suitable for a wide range of embedded applications. Its EEPROM architecture provides fast and reliable data storage, and the device requires minimal external components for operation. Additionally, it features excellent power performance, making it a great choice for low-power embedded systems.

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