MG200Q2YS60A Allicdata Electronics
Allicdata Part #:

MG200Q2YS60A-ND

Manufacturer Part#:

MG200Q2YS60A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD CMPCT DUAL 1200V 200A
More Detail: IGBT Module Half Bridge 1200V 200A 2000W Chassis ...
DataSheet: MG200Q2YS60A datasheetMG200Q2YS60A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 2000W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 15nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MG200Q2YS60A is a power module based on Insulated Gate Bipolar Transistor (IGBT) technology. It is a low-cost, high-performance module designed to provide safe and reliable operation in a wide range of applications, including industrial motor drives, welding, traction and automotive applications.

MG200Q2YS60A has an integrated driver circuit for high-side and low-side IGBTs with over-current, temperature and under-voltage protection. This module is ideal for high power applications due to its low resistance and high switching frequency. The high temperature rating and the large current capacity of the module makes it suitable for high power applications in harsh environments.

The working principle of an MG200Q2YS60A module is based on IGBT principle. IGBT is a bipolar transistor which combines the properties of MOSFETs and BJT (Bipolar Junction Transistor). It has two main terminals, called the emitter and collector. The emitter forms a hole in the base region of the device while the collector is connected to the drain and source. IGBTs are capable of switching large currents and high voltages. The functioning of IGBTs is similar to traditional BJTs. Current flows between the emitter and collector when the base-emitter junction is forward biased and the base-collector junction is reverse biased.

MG200Q2YS60A modules are used in a broad range of applications due to the low-cost and high performance. Common applications include: uninterruptible power supplies (UPS), industrial drives and inverters, motor control, battery charging, welding and automotive applications. Additionally, the low switching loss and high current density of the module make it ideal for high power applications, such as welding and traction.

The MG200Q2YS60A has many advantages compared to other power module technologies. Its low switching loss and its fast switching speed make it suitable for high power applications. Furthermore, the integrated driver circuit integrated with the module enhances system reliability and reduces the overall cost of the system. Additionally, the large current capacity and wide temperature range of the module make it suitable for harsh environments. The MG200Q2YS60A is therefore an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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