MS1001 Allicdata Electronics
Allicdata Part #:

MS1001-ND

Manufacturer Part#:

MS1001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 270W 20A M174
More Detail: RF Transistor NPN 18V 20A 30MHz 270W Chassis Mount...
DataSheet: MS1001 datasheetMS1001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): --
Gain: 13dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174
Description

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MS1001 is a type of bipolar junction transistor (BJT) specifically designed for use in radio frequency (RF) circuits. It is a general purpose, small signal BJT, with relatively low power dissipation, and a wide range of frequencies at which it can be operated. The MS1001 has been around since the 1970s, and is still in production, and widely used.

Applications

The MS1001 is suitable for use in a range of RF applications, including linear and low frequency amplifiers, oscillators, and mixers. It can also be used in tuned amplifiers, and in basic HF circuits. Because of its low power dissipation, it is often found in consumer-grade portable radios and broadcast receivers, as well as more sophisticated lab-grade and RF measurement equipment. It is frequently used as an IF amplifier in conjunction with a common base front-end stage. It can also be used in high-frequency switched RF applications.

Pinout and Properties

The MS1001 is a three-pin device, with pins 1, 2 and 3 corresponding to the base, emitter and collector, respectively. It has a maximum collector-emitter voltage of 30 volts and a minimum collector-emitter saturation voltage of 6 volts. It is rated for a maximum collector current of 1A, with a minimum dynamic resistance of 2000 ohms. The maximum frequency of oscillation is 100MHz, and the maximum power dissipation is 0.3 watts. The gain-bandwidth product (fT) is 10MHz, with a typical gain of 100.

Working Principle

The MS1001 is a NPN BJT and works on the principle that a current flowing through the base (pin 1) will control a larger current flow between the collector (pin 3) and the emitter (pin 2). This is known as a current gain and is typically expressed as hfe (the common-emitter current gain) or hre (the common-base current gain). BJTs can also be used as switches, with the base providing control and the collector providing the output. Additionally, they are frequently used in amplifiers, both as preamplifiers, and as power amplifiers.

In amplifiers, their high current gain allows them to amplify small signals, such as those coming from low-level sources like microphones, while their low power dissipation allows them to be used in battery driven devices. In oscillators, the current gain of the BJT is used to create sustained oscillations, allowing it to self-generate signals. In mixers, it is used to combine two separate signals, allowing for enhanced signal manipulation. BJTs are also used extensively in RF circuits, where their ability to operate at high frequencies, and their low power dissipation, are frequently the key criteria.

Conclusion

The MS1001 is a type of bipolar junction transistor (BJT) specifically designed for use in radio frequency (RF) circuits. It has a maximum collector-emitter voltage of 30 volts, rated for a maximum collector current of 1A, and a maximum frequency of oscillation of 100MHz. It is suitable for use in a range of RF applications, including linear and low frequency amplifiers, oscillators, and mixers. It can also be used in high-frequency switched RF applications, and is frequently found in consumer-grade portable radios and broadcast receivers. It works on the principle that a current flowing through the base (pin 1) will control a larger current flow between the collector (pin 3) and the emitter (pin 2).

The specific data is subject to PDF, and the above content is for reference

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