MS1003

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	18V
Frequency - Transition:	136MHz ~ 175MHz
Noise Figure (dB Typ @ f):	--
Gain:	6dB
Power - Max:	270W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 5A, 5V
Current - Collector (Ic) (Max):	20A
Operating Temperature:	200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	M111
Supplier Device Package:	M111

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MS1003 is a type of transistor known as a Bipolar Junction Transistor (BJT) that has been specially designed for radio frequency (RF) applications. It is a common component used in a variety of communications systems from satellite communications to radio hardware. The MS1003 offers a wide range of features, including reduced amplitude ripple, higher production yields and improved thermal performance. In addition, the MS1003 transistor is well-suited for applications requiring a low noise figure and high input power capabilities.The MS1003 transistor is a two-terminal device, consisting of two N-type semiconductor layers separated by a thin layer of P-type semiconductor material. When current is applied to the base terminal, it is converted into a small current that is injected into the N-type layer. This generates a larger current in the P-type layer, thereby causing current to flow between the emitter and collector terminals of the device. The current gain of the transistor is dependent on the ratio of the current between the collector and emitter terminals.The MS1003 can be used as either a unipolar or bipolar device. In a unipolar configuration, it functions as a current source, allowing current to flow from the base to the collector. In a bipolar configuration, the transistor operates as a voltage source, allowing voltage to be applied between the base and collector. In either configuration, the current gain of the transistor can be increased by adding a resistor between the collector and the base.The RF performance of the MS1003 transistor is largely dependent on the type of device used and its operating conditions. When used in a radio frequency application, the MS1003 should be chosen for its maximum frequency range. This is important, as the highest frequencies require faster switching times and consequently higher power levels. The current gain and noise figure of the device should also be taken into consideration when selecting the appropriate device for a particular application.In order to properly operate the device and ensure optimum RF performance, it is important that the operating voltage and current ratings of the MS1003 are observed. The operating voltage supplied to the emitter and collector terminals should not exceed the maximum voltage ratings under any circumstance. The maximum collector current should also not be exceeded, as this can cause significant distortion and even damage the device. Additionally, proper heat sinking should be used where necessary to ensure that the device operates within its safe temperature range.The MS1003 transistor is a versatile and reliable device that can be employed in a variety of radio frequency applications. By choosing the appropriate device and observing the operating parameters of the device, engineers can take full advantage of its performance capabilities and ensure that the device functions reliably and efficiently.

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