MS1030DE Allicdata Electronics
Allicdata Part #:

MS1030DE-ND

Manufacturer Part#:

MS1030DE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: MS1030DE datasheetMS1030DE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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Transistors are an essential component used in a wide variety of electronic and electrical applications. Bipolar (BJTs) transistors are particularly preferred in radio frequency applications thanks to their high-frequency response compared to other types of transistors. One of the most successful bipolar transistors for radio-frequency applications is the MS1030DE, a bipolar Junction Transistor (BJT) which is used for RF amplifiers, RF oscillators, and other applications.

The continued use of the MS1030DE can be attributed to its remarkable performance. The transistor has a maximum frequency of 2GHz, and a power dissipation of 60 watts. It also has a maximum collector current of 2 amps and a minimum collector-emitter voltage of -60 volts. These characteristics make it ideal for use in many applications.

Apart from its excellent performance, the MS1030DE also has two unique features that make it stand out from other transistors: the package and its operation voltage. The MS1030DE is packaged in a TO-3 package, which ensures easy heat distribution from the fins on the package. Additionally, it provides a great thermal resistance coefficient of 0.2 degrees Celsius per watt, which prevents excessive heat from being generated on the package.

The other unique feature of the MS1030DE is its operation voltage. This transistor is able to work at very low voltages, as low as 0.1 amplifiers and 0.1 millivolts, making it ideal for RF amplifiers in mobile phones, radios, and other low-voltage devices. This means that the battery-operated devices don’t have to use as much power, thus increasing their battery life.

The MS1030DE’s working principle is based on the classic current-controlled operating principle of bipolar transistors. This type of transistor works by passing current through the emitter-base junction. This allows the current to control the collector-emitter current. The transistor amplifies the current, which can be used to amplify voltage, and allows the transistor to function as an amplifier.

The MS1030DE may be used for many different kinds of applications, including high-frequency amplifiers and oscillators, modulators, mixers, and many other types of circuits. It may be used as a voltage amplifier, as it is able to produce an output of about two to three times the input voltage. It may also be used as an oscillator to form an oscillating signal and generate an AC waveform. Additionally, it can be used as a mixer in radio transmitters and receivers.

The MS1030DE is a bipolar Transistor which offers many advantages over other transistors which are made for RF applications. It is able to operate at very low voltages, which helps to reduce power requirements, and its TO-3 package provides excellent thermal resistance which prevents heat and keeps the device from becoming too hot. Furthermore, its current-controlled operating principle allows the transistor to be used as an amplifier and an oscillator.

The specific data is subject to PDF, and the above content is for reference

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