| Allicdata Part #: | MS1051-ND |
| Manufacturer Part#: |
MS1051 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS RF BIPO 290W 20A M174 |
| More Detail: | RF Transistor NPN 18V 20A 30MHz 290W Chassis Mount... |
| DataSheet: |  MS1051 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 18V |
| Frequency - Transition: | 30MHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | 11dB ~ 13dB |
| Power - Max: | 290W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 5mA, 5V |
| Current - Collector (Ic) (Max): | 20A |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | M174 |
| Supplier Device Package: | M174 |
Description
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MS1051 Application Field and Working Principle
Introduction:
MS1051 is a type of high power RF bipolar transistor. It’s designed for use in cell phones, satellites, military and aerospace systems, television and radio transmitters, and medical equipment. It’s used in high-frequency and high-power applications where high efficiency is required. MS1051 transistors are available in two different designs: MS1051-NPN and MS1051-PNP. The MS1051 transistors use a high-gain principle and provide good power output with low noise and high efficiency.
Application Fields:
The MS1051 transistors can be used in a wide range of applications. They are suitable for use in both low power applications such as cell phones and personal audio devices, and high power applications such as radio and television transmitters. They can also be used in radar, navigation, and communication systems. The MS1051 transistors are also suitable for use in medical device applications such as ECG, EEG, and EEG-based medical applications.
Working Principle:
MS1051 transistors work on a high-gain principle. This means that the transistor operates by amplifying the input signal so that the output signal is much larger than the input. This is done by controlling the flow of current through the transistor. To increase the gain of the transistor, a positive voltage is applied to the gate of the transistor. This increases the current flow through the transistor, which in turn increases the output signal. The MS1051 transistors use a high-gain principle and provide good power output with low noise and high efficiency.
Characteristics:
The MS1051 transistors have a number of characteristics that make them suitable for various applications. They have a high breakdown voltage, high gain, and high operating frequency. They also have good thermal reliability and are designed for rugged operation. The MS1051 transistors are available in two designs: MS1051-NPN and MS1051-PNP. The MS1051-NPN transistors provide good current gain, while the MS1051-PNP transistors provide good power gain.
Conclusion:
The MS1051 is a type of high power RF bipolar transistor. It’s designed for use in cell phones, satellites, military and aerospace systems, television and radio transmitters, and medical equipment. It’s used in high-frequency and high-power applications where high efficiency is required. The MS1051 transistors use a high-gain principle and provide good power output with low noise and high efficiency. They have a number of characteristics that make them suitable for various applications.
The specific data is subject to PDF, and the above content is for reference
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