MS2473

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MS2473 is a high-power bipolar junction transistor (BJT) which was designed for radio-frequency (RF) applications. It belongs to the Bipolar N-P-N Transistor category and is optimized for applications requiring high gain and power. The MS2473 transistor is a high-frequency device that is used in high-powered RF amplifier circuits. It is an excellent device for linear and ultra-linear amplifier designs. The MS2473 has excellent gain and power capabilities, making it ideal for RF applications.

The MS2473 has an hfe or combination power gain of 500. This allows for a greater input signal level without distortion. The transistor also has a low capacitance, which is advantageous for high-frequency devices, and an extremely low noise figure of 1.5dB. This means that the device is suitable for wide-band applications with low-level noise. The MS2473 also has a very low self-oscillation frequency, which is a valuable feature for high-frequency amplifiers.

The MS2473 has a unique construction that is exclusive to general-purpose transistors. It is made up of a single monolithic wafer structure that includes four transistors, a base pole, and a collector lead. These components are interconnected to form the device, which in turn creates the needed gain and power characteristics. With this type of construction, a high-power RF amplifier can be designed with a single transistor.

The MS2473 works by creating a large electrical field between the collector and base pole. The size of the field is determined by the current supplied to the collector lead. When an input signal is applied, the current supplied to the collector pole is increased, causing the field to expand, which in turn increases the voltage of the collector pole. This creates an amplified output signal from the base pole and is passed on to the output. This process is repeated over again to create an amplified signal and is why the MS2473 works so well in RF amplifiers.

The MS2473 has numerous applications due to its superior design and power capabilities. It is an ideal device for amplifying audio and voice signals in receivers, transmitters, and broadcast systems. It is also an excellent choice for making power amplifiers with high power levels. The MS2473 is also an excellent device for designing high-gain linear and ultra-linear amplifiers.

In conclusion, the MS2473 is a highly efficient and powerful bipolar junction transistor, specifically designed to provide high gain and power in radio-frequency applications. Its superior construction and gain allow for a wide range of applications in both audio and high-power RF amplifiers. The MS2473 is an excellent device for linear and ultra-linear amplifier designs, as well as for making power amplifiers with high power levels.

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