MS2477 Allicdata Electronics
Allicdata Part #:

MS2477-ND

Manufacturer Part#:

MS2477

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: MS2477 datasheetMS2477 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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MS2477 is a type of bipolar junction transistor (BJT). It is frequently used in RF applications due to its wide bandwidth and low-noise operation. It is also used in many other frequency applications such as high-frequency amplifiers, clock circuits, low-noise oscillators, and transient voltage suppressors.

A BJT consists of three regions: the emitter, the base, and the collector. These regions are separated by thin junctions, or PN-junctions. When a voltage is applied across these three regions, current will flow through the transistor as electrons are drawn from the emitter to the base, and then to the collector. This is known as an active region of operation. The amount of current that flows through the transistor is controlled using the applied voltage levels.

The MS2477 is designed to operate at frequencies up to 2GHz. It is constructed from a silicon-germanium substrate, which gives it improved performance over traditional silicon-based transistors. The MS2477 offers very low noise and high gain characteristics. It also features a low input capacitance, which allows it to operate at high frequencies without degrading the signal-to-noise ratio.

The working principle of the MS2477 is dependent on the base and collector bias voltages. With the base at a positive voltage, the collector current will increase. Conversely, when the base is at a negative voltage, the current will decrease. The amount of current flowing through the transistor is determined by the magnitude of the bias voltage and by the amount of charge on the base-collector junction.

The MS2477 is also designed to be tolerant to high temperatures. This is due to its low power dissipation levels and its low-voltage operation. The excellent temperature resistance makes it suitable for operation in hostile environments.

In addition to its RF applications, the MS2477 is also suitable for many other purposes, such as low-power switching, driving relays, logic gates, power converters, and mobile communications. It is a versatile device, capable of handling a wide range of frequencies and power levels.

The MS2477 is an excellent BJT for RF applications due to its wide bandwidth and low-noise operation. In addition, its low power dissipation, low input capacitance, and high temperature tolerance make it well-suited for many other types of applications.

The specific data is subject to PDF, and the above content is for reference

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