| Allicdata Part #: | MS3455-ND |
| Manufacturer Part#: |
MS3455 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | RF POWER TRANSISTOR |
| More Detail: | RF Transistor |
| DataSheet: | MS3455 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
Description
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MS3455 application field and working principle
Introduction
MS3455 is a small signal, silicon, NPN, bipolar junction transistor that provides high-frequency performance up to 400 MHz, low noise and gain flatness over temperature range. It is commonly used in RF amplifiers, mixers, oscillators and receivers. MS3455 is well suited for use in Bluetooth applications. The device is also ideal for use in wireless applications such as CDMA, GSM/EDGE, WCDMA/HSPA, and WLAN.Application field
MS3455 is designed for use in applications such as high-frequency amplifiers, mixers and oscillators. The device can be used for RF amplifiers and receivers operating up to 400 MHz. It is well suited for wireless applications such as CDMA, GSM/EDGE, WCDMA/HSPA, and WLAN. Additionally, its low noise and high linearity make it ideal for low-noise amplifiers (LNAs) application in RF systems.Working principle
The MS3455 is a bipolar NPN transistor, which means it has two base connections that allow its current to be controlled. The voltage applied to the base terminals will control the current flowing through the transistor. When the base voltage is less than the emitter voltage, the current will be turned off. When the base voltage is higher than the emitter voltage, the current will turn on, allowing current to flow through the collector. This principle is called the "common-emitter" configuration, and it is the most common configuration used in circuits consisting of bipolar transistors. The MS3455 has a wide range of current gains, making it suitable for use in circuits requiring low-noise and high-linearity.Conclusion
The MS3455 is a small signal, silicon NPN bipolar junction transistor, designed for use in high frequency and wireless applications. The device provides high-frequency performance up to 400 MHz and low noise and gain flatness over temperature range. It is ideal for use in RF amplifiers, mixers, oscillators and receivers, as well as Bluetooth, CDMA, GSM/EDGE, WCDMA/HSPA and WLAN applications. The working principle of the device is based on the common-emitter configuration of a bipolar transistor, in which the current through the transistor is controlled by the base voltage. The MS3455 has a wide range of current gains and is suitable for use in circuits requiring low-noise and high-linearity.The specific data is subject to PDF, and the above content is for reference
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MS3455 Datasheet/PDF