Allicdata Part #: | MSC1090M-ND |
Manufacturer Part#: |
MSC1090M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor 65V 5.52A 1.025GHz ~ 1.15GHz 220W C... |
DataSheet: | MSC1090M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.4dB |
Power - Max: | 220W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 500mA, 5V |
Current - Collector (Ic) (Max): | 5.52A |
Operating Temperature: | 200°C |
Mounting Type: | Chassis Mount |
Package / Case: | M220 |
Supplier Device Package: | M220 |
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The MSC1090M, a type of Bipolar Junction Transistor (BJT), is specially designed for radio frequency (RF) applications. This type of transistor is characterized by its ability to modulate a radio frequency signal, allowing it to amplify or attenuate the signal in order to get the desired output signal. This makes it useful for a variety of radio operations, such as frequency modulation (FM), phase-shift keying (PSK) and amplitude modulation (AM).
The MSC1090M, being a BJT, has a very different structure from other types of transistors. At the core, it consists of three doped regions arranged vertically, which are known as the emitter, collector and base. These regions are insulated from each other and are separated by layers of insulating material, such as glass or silicone. When a small current is passed through the emitter carried by an electron, it will move to the base and then to the collector, allowing the transistor to amplify current or voltage-based signals.
The radio frequencies that the MSC1090M can handle are fairly high, up to 1GHz, allowing it to be used in a variety of applications. One such application is in remote sensing, especially radar, where the transmitter and receiver need to communicate over long distances. It is also used in satellite circuits, enabling it to receive and transmit signals from different orbiting bodies. The MSC1090M is also used in communications receivers, amplifiers, audio systems, and various other types of electronics.
Besides its wide range of applications, the MSC1090M is also known for its reliability and durability. This type of transistor has very low power consumption, meaning it operates at a fraction of the energy used by other transistors. Additionally, unlike other transistors, it does not suffer from thermal runaway and has very low base current leakage. These factors combine to make the MSC1090M a reliable choice for use in radio frequency applications.
The MSC1090M is a reliable and durable transistor, making it an ideal choice for use in radio frequency applications. With its low power consumption and minimal base current leakage, it is able to provide reliable performance in a wide range of applications. This type of transistor is capable of handling high frequencies up to 1GHz, enabling it to be used in remote sensing, satellite circuits, communications receivers, amplifiers, and audio systems.
The specific data is subject to PDF, and the above content is for reference
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