MT18JSF51272PDZ-1G4D1

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Mt18jsf51272pdz-1g4d1 is a type of dynamic random access memory (DRAM) module used to store data or programs for access by a computer\'s central processing unit (CPU). The module is a 4Gbps, 1G Bytes, 72-bit registered dual in-line memory module ( RDIMM ), and has a total of 46 DRAM components. The module is designed to be used in a range of applications, including servers, workstations, and high-end desktop systems.DRAM is a type of volatile memory that requires constant power to retain data. Mt18jsf51272pdz-1g4d1 is a type of DRAM module specifically designed for use in servers, workstations, and other high-end systems. It is able to provide high levels of data speed and reliability, as well as a low latency memory access time.The DRAM components on Mt18jsf51272pdz-1g4d1 are arranged in a dual in-line memory module (DIMM) configuration, with 18 Registered Components (RCs) on each side. Each RC supports a bus integrated data transmission speed of 4Gbps, and has a data capacity of 1G bytes. The positive and negative strobe signals are presented on each RC, allowing for data to be transmitted at the desired speed. Additionally, the module has an internal data path that allows for data communication between the RCs and the host system. Mt18jsf51272pdz-1g4d1 is designed to provide a high-performance, reliable memory solution for server, workstation, and high-end desktop systems. The module is able to provide up to 12Gbps, 2G bytes of throughput at a latency of 17ns. This allows for high-speed data access during times of peak server load. Additionally, the module is designed to be resistant to thermal and electrical interference, allowing for optimum data reliability in a range of environments.The working principle of Mt18jsf51272pdz-1g4d1 is based on data being stored in an array of memory cells. These memory cells are organized into rows and columns, and are accessed by a row and column address that is sent from the host system. The data is organized in a page structure where each data page consists of a row of data cells, and each cell contains 8 bits of data. When data is written to the module, it is stored in the memory cells along with the corresponding row and column address. When data is read from the module, it is accessed through the row and column address sent from the host system. The data is then sent at high speed on the module\'s internal data path to the host system.In conclusion, Mt18jsf51272pdz-1g4d1 is a type of DRAM module designed to provide high-performance, reliable memory solutions for servers, workstations, and other high-end systems. The module is arranged in a dual in-line memory module (DIMM) configuration, and uses an internal data path to communicate with the host system. It is able to provide up to 12Gbps, 2G bytes of throughput at a 17ns latency, making it an ideal option for a range of applications.

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