MT42L128M64D2MP-25 WT:A TR

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Memory is one of the fundamental components in computing and electronic systems. Memory is broadly classified as either static or dynamic memory. MT42L128M64D2MP-25 WT:A is a dynamic random access memory (DRAM) device which is used in applications like computer memory, embedded systems and military systems. This article will focus on exploring the DRAM technology application field and the working principle of MT42L128M64D2MP-25 WT:A memory.

Application Field of MT42L128M64D2MP-25 WT:A DRAM

MT42L128M64D2MP-25 WT:A is a DDR3-based DRAM device manufactured by Micron Technology. This device has a total memory of 128 Megabytes (MB), with 64 Megabits (Mb) per device. It has a signal frequency of 1333 megatransfers per second (MT/s) and power supply frequency of 1.5 volts. This DRAM device is primarily used in laptop computers and embedded systems. It is also used in the military systems such as radar systems, navigation systems and tactical weapon guidance systems. This DRAM device has been tested in harsh environments and can meet the safety requirements.

The DDR3-based DRAM technology provides improved performance and lower power consumption when compared to the older generation DDR2 technology. The MT42L128M64D2MP-25 WT:A device can provide up to 1333 MT/s of peak read/write performance and provides a low power operation of 1.5v. The device can operate with a double data rate of 667 MT/s and a 567 MT/s read speed. This device is suitable for applications requiring superior performance with low power consumption such as notebook models, tablets, netbooks and embedded systems.

Working Principle of MT42L128M64D2MP-25 WT:A Memory

MT42L128M64D2MP-25 WT:A DRAM is based on DRAM technology. DRAM is a type of semiconductor-based random access memory where each memory cell stores a single binary bit of data. Each memory cell is made up of a transistor and a capacitor. The capacitor stores the charge and the transistor is used to control the data stored. The working of this DRAM device is based on the principle of charge storage and refreshing of the cells periodically. The capacitor in each cell holds the electric charge representing the binary one or zero. The amount of charge stored in each cell is periodically refreshed to prevent the charge from leaking away. When the data needs to be read, the electric charge in the capacitor is used to determine its value.

In MT42L128M64D2MP-25 WT:A DRAM, data is stored in a matrix of rows and columns. Each row is called a page and each column is referred to as a bank. The device contains eight banks of memory with each bank consisting of 16 pages. To read data from the memory, the memory controller sends the row address and column address to the device. The requested data is then opened and the charge in each cell is measured to determine its value. The measured charge is then sent to the memory controller.

Conclusion

MT42L128M64D2MP-25 WT:A DRAM is a dynamic random access memory device used in various application areas. This device is mainly used in laptop computers, embedded systems, and military systems. It works based on the principle of charge storage and refreshing which stores data in a matrix of rows and columns. The DDR3-based DRAM device has superior performance than other devices and offers a low power operation of 1.5v. It is designed to meet the safety requirements in harsh environments and can provide peak read/write performance of 1333 MT/s and a 567 MT/s read speed.

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