MT42L256M64D4EV-18 WT:A

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Memory is a vital component of any device and play a crucial role in almost all types of applications. MT42L256M64D4EV-18 WT:A, a type of memory manufactured by Micron Technology, is being utilized for a variety of applications due to its performance, capacity and reliability. This article aims to provide an overview of the MT42L256M64D4EV-18 WT:A, its application field and working principle.

Overview

The MT42L256M64D4EV-18 WT:A is a monolithic double-data rate (DDR) synchronous dynamic random access memory (SDRAM). It provides 256 Megabit (32 Megabytes) density and is configured with 4,096 banks and 4 bank groups. It is organized as 4,096 rows by 512 columns by 16 bits.

The MT42L256M64D4EV-18 WT:A has an asynchronous interface and is available in Process Multi-Chip Package (P-MCP) with x16 pins and ball out configuration. It operates with a supply voltage of 1.5V VDDQ and 3.3V VDD. The device has an integrated data strobe for command/address (DQS) and multi-bus read data outputs (Q0–Q15) for data. Additionally, the MT42L256M64D4EV-18 WT:A has built-in low-power operations, including deep power-down, partial array self-refresh, and clock frequency change.

Application Field

The MT42L256M64D4EV-18 WT:A is widely used in a variety of applications, such as embedded memory control, system memory expansion, and memory upgrades. The device is used in an array of applications in industrial, networking, telecommunications, mobile, consumer, and gaming systems.

This memory is specifically ideal for applications with fast data rates, low power requirements, and a need for increased capacity. The MT42L256M64D4EV-18 WT:A has very low latency and a high level of performance. Combined with its large capacity and power-saving features, this memory has become a popular choice for data-intensive applications that require high-speed operations.

Working Principle

The MT42L256M64D4EV-18 WT:A memory can be classified in the synchronous dynamic random access memory (SDRAM) category. This type of memory is characterized by its speed and ability to store high amounts of data. SDRAM memory works by continually refreshing its contents at a frequency that is much faster than DRAM. This allows the memory to access data quickly and offers increased performance.

The MT42L256M64D4EV-18 WT:A utilizes the DDR technology to maximize bandwidth and performance. The device\'s double-data rate (DDR) technology consists of two read/write cycles per clock period while the I/O bus signals are double-pumped, allowing data to be sent and received on both the rising and falling edges of the clock signal. This doubled clock frequency means that the memory can access data twice as fast as a standard single data rate (SDR) memory.

The MT42L256M64D4EV-18 WT:A is composed of 4,096 banks that are divided into four groups, each with a different pipeline. This pipelining allows multiple memory transactions to be processed concurrently, resulting in increased system performance. Furthermore, the MT42L256M64D4EV-18 WT:A integrates an array of error correction codes (ECC) that ensure data integrity and maintain high-level reliability.

Conclusion

In conclusion, the MT42L256M64D4EV-18 WT:A is a high-performance memory device that is used in a variety of applications. The device features a double-data rate (DDR) interface, low latency, and a high capacity. It is well-suited for data-intensive applications, due to its capabilities to process multiple transactions simultaneously and its built-in error-correction codes (ECC).

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