MT48LC4M16A2F4-75:G TR

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Memory is an often used and important element in computers and other electronic devices. The MT48LC4M16A2F4-75:G TR is a type of memory module that is widely used in many modern applications. This article will discuss the application field and working principle of the MT48LC4M16A2F4-75:G TR.

The MT48LC4M16A2F4-75:G TR memory module is a 4M x 16 4-bank SDRAM (Synchronous Dynamic Random Access Memory) with a depth of 4M bits. It has an 8-bit I/O port, an address pin of 10 bits, a clock pin, four chip select pins, a reset pin and four output enable pins. This module is suitable for use in consumer products, communication, industrial, automotive and medical applications which require high performance, low power consumption and a small footprint.

The MT48LC4M16A2F4-75:G TR memory module operates in a synchronous mode and is organized into 6 blocks of 64K x 16, four blocks of 8K x 16, and two blocks of 128K x 16. SDRAM provides both faster read and write operations compared to conventional DRAM (Dynamic Random Access Memory) technology. It also offers predictability, low latency and increased memory throughput. Moreover, the module has an operating voltage range of 2.5V to 3.6V, making it energy efficient.

In terms of working principle, DRAM architecture consists of memory array, row and column decoders, address and data multiplexers and control logic. Data is stored in cells which constitute a memory array where each cell is capable of storing one bit of information. Row and column decode logic is used to decode the row address and column address from the given address specified by the CPU. Data multiplexers are used to enable the data that is read or written. The control logic uses the command bus to control the internal operation of the memory array as well as other components.

The MT48LC4M16A2F4-75:G TR memory module offers several integrated features that reduce the need for external circuitry and simplifies overall system design. These features include refresh counter, address step register, active array autorefresh and autocharge. The refresh counter handles refresh operations while the address step register provides sequencing of the address so that data can be written or read in consecutive memory locations. The active array autorefresh allows continuous refresh of data stored in memory cells during writes and reads, thus increasing the validity of the data stored in cells. The autocharge feature stores the previous data written to the memory array for easy retrieval during a subsequent read operation.

The MT48LC4M16A2F4-75:G TR memory module is an excellent choice for applications which require high performance, low power and a small footprint. With its advanced features and ease of integration, this memory module can easily be incorporated into various systems and enable users to maximize their system performance.

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