MT48LC4M32B2TG-6A:L

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MT48LC4M32B2TG-6A:L is a Memory device developed by Micron Technology that is used primarily in industrial applications such as industrial and factory automation, medical, communications and networks, and military systems where reliable, low power, high-performance memory is required.

The MT48LC4M32B2TG-6A:L Memory device is based on a 16 x 32 Transition Mode design. It integrates 16-Mbyte 4 x 4 GB Array with a 4-way associativity and a 6-bit on-chip virtual address. The Memory device also features low power, high performance operation and high density that makes it ideal for applications requiring large-scale memory.

The primary application field of the MT48LC4M32B2TG-6A:L virtual addressable memory device is primarily in industrial applications, including industrial and factory automation, medical devices, communications and networks, and military systems where reliable, low power and high performance memory is required. It can also be used in embedded systems applications where a small and low power memory solutions is required.

The working principle of the MT48LC4M32B2TG-6A:L Memory device is based on the Transition Mode architecture. This type of architecture makes use of a distinct set of memory cell structures to store several states of information. In this architecture, each cell can store more than one bit of information and can transition quickly between states. This kind of architecture is advantageous as it provides very low power and very high performance at the same time.

The MT48LC4M32B2TG-6A:L Memory device features an on-chip virtual address bus for addressing memory locations. This bus is coupled to the external address and data buses, allowing for easy repurposing or re-configuration of the address and data paths. The device also supports up to six independent data and error correction protocols, allowing for a wide range of operations.

The MT48LC4M32B2TG-6A:L Memory device also features an enhanced error-correction capability. It can detect and correct single-cell errors as well as a variety of double-cell and multi-cell errors. The error-correction capability allows for optimal data security and reliability.

In addition, the MT48LC4M32B2TG-6A:L Memory device features on-chip error detection and correction mechanisms. These mechanisms are designed to detect, identify, log and report errors that may occur during the read and write operations. This allows for greater fault tolerance and reliability of the device.

The MT48LC4M32B2TG-6A:L Memory device is an ideal solution for applications requiring an efficient and reliable low power, high performance solution. Its 16 x 32 Transition Mode design, enhanced error-correction capability, and on-chip address and data buses make it suitable for a wide range of industrial and embedded applications. The device is well-suited for applications where large-scale memory, low power and high performance are necessary.

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