MT48LC64M8A2P-75:C TR

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Memory plays a part in almost every aspect of computing. One of the most important types of memory is DRAM, or dynamic random-access memory. DRAM is an acronym for dynamic random-access memory, which is a type of memory that can be written and read quickly, allowing for fast access of data. The MT48LC64M8A2P-75:C TR is a DRAM device specifically designed for use in embedded systems and is widely used in many applications.

The MT48LC64M8A2P-75:C TR is a type of DRAM memory which is typically used in embedded systems and is often used in applications such as industrial automation and control, communications, data processing and medical equipment. It is frequently used in various consumer products as well, such as laptops, tablets and smartphones.

The MT48LC64M8A2P-75:C TR is an 8M x 8-bit device, meaning that it has an 8M x 8-bit capacity, allowing for a total storage capacity of 64 Mb. The device is based on a 100-pin thin quad flat-package (TQFP), which is a type of integrated circuit package that offers a high level of performance and can be soldered directly to a printed circuit board for increased reliability.

The MT48LC64M8A2P-75:C TR comes in two rewritable versions, one with a refresh rate of 16 times per cycle (MT48LC64M8A2P-75:C-TF) and the other with a refresh rate of 1 to 4 times per cycle (MT48LC64M8A2P-75:C-TR). The latter version is designed for reliable operation in extreme environmental conditions, such as temperature fluctuations, high-vibration, shock and corrosion.

The working principle of the MT48LC64M8A2P-75:C TR is based on the same principles as all other DRAM devices. It is composed of a series of cells, each one containing a transistor and a capacitor. The capacitor holds a charge, representing either a “1” or “0” bit of data, while the associated transistor acts as a switch, allowing the charge to be written to and read from the cell.

The MT48LC64M8A2P-75:C TR uses a method called “multiplexed addressing” to store and access data. With this method, the address of a particular cell is specified by sending two complementary signals, a row and a column address, to the memory device. The cell is then activated in a single operation and the data can then be read or written to.

The MT48LC64M8A2P-75:C TR is a versatile and reliable DRAM device suitable for a range of embedded systems applications. It is designed for use in extreme environmental conditions and offers a high-performance level with a maximum operating temperature of 85°C. Its eight-bit wide data bus also provides improved system performance when compared to other memory devices.

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