MTA16ATF2G64HZ-2G3H1

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MTA16ATF2G64HZ-2G3H1 Application Field and Working Principle

MTA16ATF2G64HZ-2G3H1 is a memory module from Micron Technology, Inc. This memory module belongs to the ONE-NAND MT family. It features dual-channel mode and an optimal combination of 8Gbit NAND Flash and 16Gbit Hynix DRAM. This memory module helps users to freely access data in high speed. In addition, it also features double data rate, helping to save power.

MTA16ATF2G64HZ-2G3H1 has various applications. Due to its double data rate, users can access data in high speed. This allows it to be used in a wide variety of memory-dependent products, such as servers, storage systems, and consumer electronics. In addition, its 8Gbit NAND Flash and 16Gbit Hynix DRAM help to store large amounts of data, making it ideal for applications that require large storage such as multimedia services and network applications.

MTA16ATF2G64HZ-2G3H1 works on the basis of SIMM (Single In-line Memory Module) technology, which allows it to access up to 8GB of data simultaneously. This is made possible by two groups of memory chips located on both sides of the SIMM. In addition, it also employs a two-channel Serial ATA/IDE interface, which can transfer up to 300MB/s. The DRAM is connected directly to the controller, which ensures high speed information. Furthermore, thecontroller supports Error Correction Code (ECC), which helps to reduce the possibility of data corrupting during transfer.

MTA16ATF2G64HZ-2G3H1 by Micron Technology, Inc is a highly efficient and reliable memory module. It features dual-channel mode and an optimal combination of 8Gbit NAND Flash and 16Gbit Hynix DRAM. This memory module has many applications in high-performance computing, servers, storage systems, and consumer electronics. In addition, it also works on the basis of SIMM technology and has a two-channel Serial ATA/IDE interface, which makes it suitable for handling large amounts of data. Furthermore, the controller also supports Error Correction Code (ECC), which makes the data significantly more reliable. All these features make this memory module highly attractive for many memory-dependent devices.

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