| Allicdata Part #: | MTFC16GAKAECN-4MIT-ND |
| Manufacturer Part#: |
MTFC16GAKAECN-4M IT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 128G MMC |
| More Detail: | FLASH - NAND Memory IC 128Gb (16G x 8) MMC |
| DataSheet: | MTFC16GAKAECN-4M IT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | e•MMC™ |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 128Gb (16G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | MMC |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory is a crucial component of any computing system or electronic device. Memory acts as a repository for storing user data, application state, software program instructions and other forms of data. MTFC16GAKAECN-4M is one of the memory type used widely in the information technology application field and it has working principle which can be accepted in most of the computing applications.
MTFC16GAKAECN-4M is the latest high-density, low-power memory type that is utilized to store and execute data in consumer electronics and industrial products. MTFC16GAKAECN-4M is rated as an ultralow voltage memory with a maximum voltage rating of 1.2V and a minimum operating temperature range of 0°C to 70°C. The memory cell size of MTFC16GAKAECN-4M is very small and its capacity is up to 16 Gigabytes and the access time is 0.2 nanoseconds. MTFC16GAKAECN-4M can reduce power consumption, which improves device efficiency and increases system reliability.
The working principle of MTFC16GAKAECN-4Mis based on the working principle of general Dynamic Random Access Memory (DRAM). MTFC16GAKAECN-4M memory cells are similar to that of DRAM, but are designed for ultra-low power operation and high-density storage. Each memory module consists of an array of memory cells that are accessed and controlled by a controller, or memory controller, through a two dimensional address. The memory controller is responsible for writing data to and from the memory cells, and is able to access the cell values very quickly.
When a read or write operation is requested, the memory controller fetches the memory address and reads or writes the data to the memory. The memory controller fetches the data to be read and writes the data to the memory. The data can be read in either all-bit or burst mode. In all-bit mode, all bits of the given address are read, while in burst mode, only a certain number of bits are read from the given address and from then on, the subsequent adjacent address is automatically read.
When a write operation is requested, the memory controller fetches the memory address and writes the data to the memory. The data can be written in either all-bit or burst mode. In all-bit mode, all bits of the given address are written, while in burst mode, only a certain number of bits are written to the given address and then the subsequent adjacent address is automatically written.
The MTFC16GAKAECN-4M memory module can be used in a variety of computing systems and applications. It is used in personal computers and laptops, as well as in embedded systems, automotive systems and industrial equipment. MTFC16GAKAECN-4M is an excellent choice for applications that require high densities of memory and low power.
The working principle of MTFC16GAKAECN-4M and its versatility in the IT application field make it one of the most powerful and reliable solutions for memory applications. It is very important to ensure that MTFC16GAKAECN-4M is reliable and secure during its use in various systems and applications. As such, MTFC16GAKAECN-4M is designed to meet high standards of reliability, performance and durability.
The specific data is subject to PDF, and the above content is for reference
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MTFC16GAKAECN-4M IT Datasheet/PDF