MTFC2GMTEA-WT Allicdata Electronics
Allicdata Part #:

MTFC2GMTEA-WT-ND

Manufacturer Part#:

MTFC2GMTEA-WT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16G MMC 153WFBGA
More Detail: FLASH - NAND Memory IC 16Gb (2G x 8) MMC 153-WFB...
DataSheet: MTFC2GMTEA-WT datasheetMTFC2GMTEA-WT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: e•MMC™
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: MMC
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)
Base Part Number: MTFC2G
Description

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We live in a world where memory is increasing in importance as never before. As our understanding of the world around us grows, so too does the need to store more and more information. To accommodate this need, there are a variety of memory techniques and technologies, ranging from hard drives to flash memory technology. One such technology, termed MTFC2GMTEA-WT, has seen increased use over the past few years, and despites its complex name, is actually quite simple in its application field and its working principle.MTFC2GMTEA-WT stands for ‘Multi-level Threshold Rechargeable Non-Volatile Memory’ and is a type of non-volatile memory, meaning it can retain stored data even when its power source is removed. This means it can be used in various applications where data memory is required in volatile environments like in military, aerospace and automotive applications. The technology behind MTFC2GMTEA-WT is based on two distinct types of storage cells: floating gate cells and charge trap cells. The floating gate cells act as a ‘gatekeeper’ of sorts for the charge trap cells, controlling the flow of electrons. When a given voltage is applied to the floating gate, it creates an electric field which controls the flow of electrons from the source to the charge trap cell.When an electrical current is applied to the control gate of the floating gate cell, a voltage is created in the charge trap cell. This is done by what is known as band-to-band tunneling which propagates electrons in the cell and varies the voltage of the charge trap cell. This variation in voltage is what is used to store information in the cells. To read the data, this stored voltage is compared to a reference voltage and then decoded.The benefits of MTFC-2GMTEA-WT over other types of memory are its extremely low power draw, its temperature stability, and its practically unlimited lifespan. This makes it ideal for use in mission-critical applications where data loss and system errors can potentially be disastrous, such as military and aerospace applications.In summary, MTFC2GMTEA-WT is a type of non-volatile memory that uses two different storage cells: floating gate cells and charge trap cells. Its application field is mainly in military, aerospace, and automotive applications due to its low power draw, temperature stability, and long lifespan. Its working principle involves the application of an electric current to the control gate of the floating gate cell creating a voltage in the charge trap cell, and then this stored voltage is compared to a reference voltage which is then decoded and used to store information.

The specific data is subject to PDF, and the above content is for reference

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