| Allicdata Part #: | MTFC32GLUDI-WT-ND |
| Manufacturer Part#: |
MTFC32GLUDI-WT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 256G MMC 169TFBGA |
| More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) MMC |
| DataSheet: | MTFC32GLUDI-WT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | e•MMC™ |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 256Gb (32G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | MMC |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Mounting Type: | -- |
| Package / Case: | -- |
| Supplier Device Package: | -- |
| Base Part Number: | MTFC32G |
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Memory technology has been rapidly advancing in recent years, providing solutions for a variety of application fields. The MTFC32GLUDI-WT is a new memory technology that has been designed for the specific application of mobile storage. It has the additional advantage of being able to be used in both mobile and wired applications.
The MTFC32GLUDI-WT is a 32GB Flash memory device that has been designed with a wide-temperature range, ranging from -45℃ to 85℃. This makes it ideal for mobile storage applications, where the temperatures can occasionally be extreme. The device has a total write endurance of 400 bytes per block and a total erases endurance of 10,000 cycles.
The device is made up of small flash memory cells which contain an oxide-based gate stack. This gate stack is essential for the functioning of the device and is responsible for the reliable storage of data. The gate stack is made up of two layers of metal oxide, which are sandwiched between a floating gate and the chip’s silicon substrate.
At the heart of the storage cell is the charge retention tunneling (CRT) feature. This enables the device to store data with very low power requirements. The CRT works by passing a charge from one side of the tunneling barrier to the other. When a write operation is taking place, a tunneling current is generated, which passes through the tunnel barrier and charges the internal capacitor. The tunneling current is proportional to the write speed and the duration of the write operation.
The device can be programmed with either a direct or indirect write operation. In a direct write operation, the data is written directly to the device, whereas in an indirect write operation, the data is first transferred to a temporary buffer and then written to the device. The indirect write operation is typically used to improve the write speed of the device.
The device also features two read modes: synchronous and asynchronous. In the synchronous mode, the device reads data at the same rate as the controller. In the asynchronous mode, the device reads data at a higher rate than the controller, which allows the controller to read data more quickly. This mode is primarily used to boost the reading performance of the device.
One of the advantages of the MTFC32GLUDI-WT is its thermal van der Waals (TVDW) non-volatile memory cells. This enables the device to retain data even after it has been turned off. The TVDW memory cells have an increased reliability over traditional memory cells and are ideal for applications that require high-reliability storage.
The MTFC32GLUDI-WT is an ideal solution for the mobile storage applications. It can provide robust storage with minimal power requirements. The device’s wide-temperature range and reliable storage make it an ideal choice for mobile storage applications. Additionally, the device’s two read modes and TVDW memory cells make it an efficient and reliable storage solution.
The specific data is subject to PDF, and the above content is for reference
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MTFC32GLUDI-WT Datasheet/PDF