| Allicdata Part #: | MTFC32GLUDM-WT-ND |
| Manufacturer Part#: |
MTFC32GLUDM-WT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 256G MMC 153TFBGA |
| More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) MMC |
| DataSheet: | MTFC32GLUDM-WT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | e•MMC™ |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 256Gb (32G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | MMC |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | -- |
| Supplier Device Package: | -- |
| Base Part Number: | MTFC32G |
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MTFC32GLUDM-WT Application Field and Working Principle
Memory technology has been advancing significantly in recent years. One of the driving forces of this trend is the emergence of Multi-Level Cell (MLC) NAND flash technology, which allows storage data at multiple levels within the same cell. The MLC technology combined with larger capacities and low cost make it a common choice in many memory application fields. In this instance, the MTFC32GLUDM-WT is a memory device that is designed to use MLC NAND flash technology.
The MTFC32GLUDM-WT is a Toshiba-built Multi-Level Cell (MLC) NAND flash memory device - designed for use in mobile memory applications. The device is composed of 32 Gigabyte Flash memory and is manufactured using 24 nm process technology. The MTFC32GLUDM-WT uses a controller that manages 8 parallel NAND banks, each with 16K pages. The pages are split into a programmable number of planes and 4K pages, and the device is further organized into 16 die (2GB / die).
With its MLC technology, the MTFC32GLUDM-WT is able to store data in multiple levels per cell to make it more dense compared to regular Single-Level Cell (SLC) technologies. Each cell can store two bits in Multi-Level Cell (MLC) and one bit in Single-Level Cell (SLC). SLC allows for faster write times than MLC, however the capacity of MLC is much higher than SLC. This makes the MTFC32GLUDM-WT an ideal choice for mobile storage applications that require high capacity with good transfer speeds.
In terms of operation, the MTFC32GLUDM-WT has an asynchronous mode that allows for commands to be executed separately from the data transfer. Through this method, the performance of the device can be increased significantly. In addition, the device supports a wide range of command sets, such as eMMC, ONFI, UFS, and BitBlt. This allows for more flexibility when using the device in different applications.
The MTFC32GLUDM-WT also comes with Advanced Security which enables the device to detect suspicious patterns, restrict data access and backup. Furthermore, the device can also be secured by enabling ECC and interrupt generation when an error is detected. This makes the MTFC32GLUDM-WT an ideal choice for applications that require additional security.
In conclusion, the MTFC32GLUDM-WT is an ideal device for mobile storage applications due to its usage of MLC NAND flash technology, as well as its advanced features. With its high-capacity and performance features, it is a great choice for applications looking for an efficient and reliable memory device.
The specific data is subject to PDF, and the above content is for reference
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MTFC32GLUDM-WT Datasheet/PDF