| Allicdata Part #: | MTFC4GMVEA-WT-ND |
| Manufacturer Part#: |
MTFC4GMVEA-WT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 32G MMC 153WFBGA |
| More Detail: | FLASH - NAND Memory IC 32Gb (4G x 8) MMC 153-WFB... |
| DataSheet: | MTFC4GMVEA-WT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | e•MMC™ |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 32Gb (4G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | MMC |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 153-WFBGA |
| Supplier Device Package: | 153-WFBGA (11.5x13) |
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Memory technology is rapidly progressing and many new technologies involving memory devices are being developed. The MTFC4GMVEA-WT is a 4-Gigabyte Multi-Level Memory Cell (MTFC) technology with controlled write arrays (WT). This technology is designed for high-capacity memory applications and provides higher capacity, faster speeds and greater efficiency than traditional memory technologies. It is also designed for use in mobile, embedded and automotive memories, providing higher capacity and high-performance for these applications.
The MTFC4GMVEA-WT technology is based on an array of memory cells arranged in a controlled write array (WT). These cells can be programmed and erased by applying electrical fields to the cells, which enables the cells to retain their states between writes and reads. This arrangement of memory cells enables the MTFC4GMVEA-WT to have higher densities than traditional memory technologies and also provides faster access times.
The MTFC4GMVEA-WT works by providing controlled write arrays (WT) of memory cells. These memory cells can store multiple bits of information, allowing higher density and faster access times. The MTFC4GMVEA-WT technology is also capable of performing very fast random-access reads and writes, allowing it to quickly access large amounts of data. The cells are also designed to be able to handle multiple voltages, allowing for higher fidelity in device operation.
The MTFC4GMVEA-WT technology is designed to be used in embedded, automotive and mobile applications, providing higher capacity and higher performance than traditional memory technologies. In addition, the WT technology enables the MTFC4GMVEA-WT to store multiple bits of information, providing higher capacity and faster speeds than traditional memory technologies. The cells are also designed to be energy efficient and to reduce heat generation, further increasing the suitability for use in mobile, embedded and automotive applications.
The MTFC4GMVEA-WT technology is designed to be a high-capacity memory system, providing higher density and faster access times than traditional memory technologies. It is also designed for use in applications that require higher performance and capacity than traditional memory technologies. The WT technology allows for multiple bits of information to be stored in each memory cell, providing higher density and faster access times than traditional memory technologies. The cells are also designed to be energy efficient, reducing heat generation in mobile, embedded and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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MTFC4GMVEA-WT Datasheet/PDF